3″ Silicon EPI Wafer-1

3″ Silicon EPI Wafer-1

PAM XIAMEN offers 3″ Silicon EPI Wafers.

Substrate EPI Comment
Size Type Res
Ωcm		 Surf. Thick
μm		 Type Res
Ωcm
3″Øx381μm p- Si:B[111] 0.004-0.008 P/E 12.5±2.5 p- Si:B 2.35 n/p/p+
3″Øx381μm p- Si:B[111] 0.004-0.008 P/E 140±10 n- Si:P 33.6 n/p/p+
3″Øx381μm n- Si:As[111-4°] 0.001-0.005 P/E 5.5 n- Si:P 0.31 – 0.33 n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 37.5 n- Si:P 0.6±10% n/n+
3″Øx525μm n- Si:P[111] 0.001-0.005 P/E 4.5 n- Si:P 1.1 – 1.4 n/n+, Sealed in cassettes of 24 wafers
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 5.5 n- Si:P 1.06±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 11 n- Si:P 17.5±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.7±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 2.1±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.8±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 16±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 13 n- Si:P 1.35±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 15.5 n- Si:P 9.5±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 15.5 n- Si:P 9.5±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 18 n- Si:P 0.05±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4.8±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 16.5±10% n/n+

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

2019-03-08

Share this post

Related Posts

WS2 Crystal

PAM XIAMEN offers WS2 Crystal. WS2 (Tungsten Disulfide) is the first material which was found to form inorganic nanotubes, in 1992. This ability is related to the layered structure of WS2. WS2 nanotubes have been investigated as reinforcing agents to improve the mechanical properties [...]

2019-05-20meta-author
Doped or Undoped Germanium (Ge) Crystal | Ge Single Crystal Growth

PAM-XIAMEN, a leading germanium ingot manufacturer, has germanium (Ge) crystals for sale. Due to its scarcity of resources, excellent optical and physical properties, germanium material is widely used in high-tech fields such as fiber optic systems, infrared optical systems, electronics and solar applications, detectors, [...]

2021-07-01meta-author
808nm laser wafers

Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers, provides 808nm AlGaInP/GaAs laser wafer. AlGaInP laser epitaxial wafers are high-quality semiconductor materials that can emit light in semiconductor lasers. After made on the laser chip, these materials are energized and can emit light. Then, the electrical [...]

2016-06-13meta-author
Semiconductor Wafer of SiC/GaN for Optoelectronic Devices

The application fields of SiC wafers and GaN wafers are mainly divided into electronic power field, radio frequency field, optoelectronic field, and other fields. Among them, electronic power field and radio frequency field are the most important applications, and the advantages of using SiC material are obvious. These two areas have [...]

2021-04-20meta-author
LASRALO4 STRONTIUM LANTHANUM ALUMINATE CRYSTAL SUBSTRATES

PAM XIAMEN offers LaSrAlO4 Strontium Lanthanum Aluminate Crystal Substrates.                                            Main Parameters Crystal structure M4 Growth method Czochralski method Unit cell constant a=3.756Å   c=12.63 Å Melt point（℃） 1650 Density 5.92（g/cm3） Hardness 6-6.5（mohs） Dielectric constants ε=16.8 Size 10×3，10×5，10×10，15×15，20×15，20×20 Ф15, Ф20，Ф1″，Ф2″, Ф2.6″ Thickness 0.5mm, 1.0mm Polishing Single or [...]

2019-03-13meta-author
Silicon Ingots-6

PAM XIAMEN offers Silicon Ingots. Material Description 5″Ø×420mm n-type Si:As[100], Ro=(0.0032-0.0034)Ohmcm 5″Ø (5 ingots: 540mm, 254mm, 607mm, 644mm, 201mm), n-type Si:As[100], (0.001-0.007)Ohmcm 5″Ø×375mm ingot n-type Si:As[100], Ro=(0.0021-0.0039)Ohmcm 5″Ø×330mm ingot n-type Si:As[100], Ro=(0.0022-0.0040)Ohmcm 5″Ø×416mm ingot n-type Si:As[100], Ro=(0.0024-0.0029)Ohmcm 5″Ø×273mm ingot n-type Si:As[100], Ro=(0.0024-0.0040)Ohmcm 5″Ø×388mm ingot n-type Si:As[100], Ro=(0.0029-0.0044)Ohmcm 5″Ø×340mm ingot n-type Si:As[100], Ro=(0.0032-0.0044)Ohmcm 5″Ø×290mm ingot [...]

2019-03-08meta-author