PAM XIAMEN offers Black Phosphorus – 2D crystal.
Black Phosphorus Crystal,(2-2.5) mm x (2-2.5) mm x 0.1 mm, as grown
Black Phosphorus is a semiconductor with a band gap of around 0.3 eV. The layers are stacked together via van der Waals interactions. A [...]
2019-04-17meta-author
PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
6″
350
P/P
FZ 2,700-3,250
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
900
C/C
FZ >50
SEMI Prime, 1Flat, MCC Lifetime>6,000μs
n-type Si:P
[100]
6″
825
C/C
FZ 7,000-8,000 {7,025-7,856}
SEMI, 1Flat, Lifetime=7,562μs
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
P/P
FZ >3,500
SEMI Prime, 1Flat (57.5mm)
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
790 ±10
C/C
FZ >3,500
SEMI, 1Flat
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
P/P
FZ >1,000
SEMI Prime, Notch on <010> {not on <011>}, Laser Mark
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
BROKEN
FZ >1,000
SEMI notch Test, Broken into many large pieces. One piece [...]
2019-03-04meta-author
We offer GaAs Epitaxial Wafers for Schottky Diode as follows:
1. GaAs Schottky Diode Epi Structures
No.1 GaAs Schottky Diode Epiwafer
Epitaxial Structure PAM210319
No.
Material
Composition
Thickness Target(um)
Thickness Tol.
C/C(cm3) Target
C/C Tol.
Dopant
Carrrier Type
4
GaAs
1.00
±10%
>5.0E18
N/A
Si
N++
3
GaAs
0.28
±10%
2.0E17
±10%
Si
N
2
Ga1-xAlxAs
x=0.50
1
±10%
—
N/A
—
—
1
GaAs
0.05
±10%
—
N/A
—
—
Substrate: 2”,3”,4″
No.2 4Inch GaAs Epitaxial Wafer for Schottky Diode
PAM210326 -SDE
No.
Material
Thickness
Doping
Doping Concentration
3
GaAs schottky contact layer
–
n
–
2
GaAs ohmic contact layer
–
–
5×10^18 cm-3
1
Low temperature GaAs
2um
–
–
0
Semi-insulating GaAs (100) [...]
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrate (100)
BaTiO3 (100) 10×3 x0.5 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.15 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.5 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.5 mm, 2SP [...]
2019-04-17meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaAsN wafer and other related products and services announced the new availability of size 2″ is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We [...]
2017-07-11meta-author
Silicon carbide has very stable characteristics, so that it can work stably in some harsh environments. Because of the stable chemical bonds, the technical threshold for silicon carbide production is very high. The growth conditions of silicon carbide crystal ingots are harsh, requiring high temperature (~2600℃) and high [...]
2021-04-23meta-author