PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
2019-05-13meta-author
Compared to 4H-SiC, although the bandgap of 3C silicon carbide (3C SiC) is lower, its carrier mobility, thermal conductivity, and mechanical properties are better than those of 4H-SiC. Moreover, the defect density at the interface between the insulating oxide gate and 3C-SiC is lower, which is [...]
2023-12-08meta-author
PAM XIAMEN offers 2″CZ Prime Silicon Wafer-4
Silicon wafer
Dia: 2”diameter
thickness: 280±25mm
Type: P-type (100)
Polished: one side polished
Resistivity1-10Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-16meta-author
Aluminum nitride (AlN) is a widely used III-V group nitride with a hexagonal wurtzite structure in the field of acoustic electronic devices. It has a large direct bandgap (bandgap of 6.2 eV), is compatible with CMOS technology, and has high thermal conductivity. In addition, [...]
2024-04-03meta-author
PAM XIAMEN offers Single crystal YVO4.
YVO4 is an excellent birefringent crystal for fiber optics applications. As substrate, it can replace TiO2 for lower cost and better quality in many cases
Crystal
Birefr-ingence D=he-ho
Refractive index h atl= 0.63m
Thermooptical Coef.dh/dT106/K
Structure lattice constant (A)
Melting point oC
Density g/cm3
Hard-ness (Moh)
Thermal Coef. 10-6/K
YVO4
0.222
ho=1.9929
he=2.2154
a: [...]
2019-05-21meta-author
PAM XIAMEN offers 2″ Silicon Oxide Wafer
2″ Silicon Oxide Wafer
Diameter (mm): 50mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < [...]
2020-04-24meta-author