PAM XIAMEN offers Silver(Ag) on Si wafer .
Silver Film on Silicom Wafer ,Ag: 0.2 microns / ,Si(100) P-type R:1-20 ohm.cm
Silver Metallic Film
Film Deposition by DC Sputtering
Silver Thickness: 0.2 microns
Film Resistivity: N/A
Film Crystallinity: N/A
Roughness, RMS: 4.87 nm and < [...]
2019-04-29meta-author
PAM-XIAMEN offers (10-11) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(10-11)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
CVD diamond substrate film is available with a maximum working temperature at 600℃ from PAM-XIAMEN at below spec. Single crystal diamond material has the highest thermal conductivity among natural substances known at present. Diamond substrate has stable chemical properties, good electrical insulation and low dielectric constant. The [...]
2020-03-18meta-author
Wide Bandgap Technology –Next Generation Power Devices
The tightening of industry standards and changes in government regulations are key drivers of higher energy efficiency. For example, data centers are growing exponentially to meet demand. They use about 3% of the world’s total electricity supply (400 [...]
2018-08-30meta-author
PAM-XIAMEN offers p type electronic grade Germanium (Ge) wafer. Germanium is a chemical element. Its chemical symbol is Ge. Its atomic number is 32 and the atomic weight is 72.64, belonging to the IVA group elements. So the germanium electron configuration must have 32 [...]
2019-03-15meta-author
HEMTs evolved from Field Effect Transistors (FETs) are suitable for manufacturing monolithic microwave integrated circuits (MMICs).
HEMTs were initially generated to obtain high electron mobility in semiconductor devices at room temperature. The electron mobility of FETs is limited even with high doping levels, so high [...]
2022-07-25meta-author