PAM XIAMEN offers 6″CZ Prime Silicon Wafer-2
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Silicon epitaxy with Boron dopant in size 200mm from PAM-XIAMEN is available for semiconductor device fabrication. Silicon epitaxy growth is a surface treatment process for silicon wafers, which means that a single crystal film is superimposed on the polished wafer by chemical reaction or other [...]
PAM XIAMEN offers3″ Silicon Wafer-15 3″ Si wafer(32825), R≤200Ωcm 1. Diameter: 76.2 ± 0.1mm 2. The type of alloying: P/type boron 3. Orientation (111) ±0.5º 4. Disorientation 4°±0.5º to <110> direction 5. Resistivity: ≤150Ωcm 6. Primary surface: semi std 7. Secondary surface: none 8. Thickness: 380±25μm 9. Overall thickness variation on the plate is [...]
PAM XIAMEN offers Sodium-bismuth tungstate (NaBi(WO4)2. Sodium-bismuth tungstate (NaBi(WO4)2 or NBWO) is a scintillator material possessing very high optical quality, high density and radiation hardness. Due to these properties NBWO crystals are widely used in quantum electronics, acousto-optics and high-energy physics, in particular, in [...]
AX-type defects in zinc-doped GaAs(1−x)P(x) on GaAs GaAsP alloys are potential candidates for ∼ 1.5 to 1.8 eV photovoltaic converters in multijunction solar cells. We use thermally stimulated capacitance, deep level transient spectroscopy, and photocapacitance to characterize defects in p-type GaAs0.83P0.17 and GaAs0.72P0.28 grown lattice-mismatched [...]
PAM XIAMEN offers Polyelectrolyte Multilayer Modified Silicon Substrate A client of our recently requested a substrate that would help them with their research experiement. “My experiment is to synthesize the novel magnesium biomaterials on the polyelectrolyte multilayer modified silicon wafer. The wafer would be similar with the [...]
Layer structure of 703nm Laser We can offer Layer structure of 703nm Laser as follows: Layer Composition Thickness (um) Doping(cm-3) Cap P+- GaAs 0.2 Zn:>1e19 Cladding p – Al0.8Ga0.2As 1 Zn:1e18 Etch stop GaInP 0.008 Zn:1e18 Top barrier Al0.45Ga0.55As 0.09 Undoped Well Al0.18Ga0.82As 0.004 Undoped Barrier Al0.45Ga0.55As 0.01 Undoped Well Al0.18Ga0.82As 0.004 Undoped Barrier Al0.45Ga0.55As 0.01 Undoped Well Al0.18Ga0.82As 0.004 Undoped Bottom barrier Al0.45Ga0.55As 0.09 Undoped Cladding n – Al0.8Ga0.2As 1.4 Si:1e18 Buffer n – GaAs 0.5 Si:1e18 Substrate n+ – GaAs S :>1e18 Source:PAM-XIAMEN For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.
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