Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate
In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, [...]
2″ Free Standing Gallium Nitride (GaN) Substrate
PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production. (more…)
2012-03-06meta-author
PAM XIAMEN offers Cu – single crystal Substrates & Polycrystalline & Copper Foam.
1. General Properties for Single Crystal Copper
Symbol : Cu
Atomic Number: 29
Atomic Weight: 63.546(3
Crystal structure: FCC -Face centered cubic
Density: 8.96 g/cm3
Melting Point: 1357.77 K (1084.62 °C, 1984.32 °F) [...]
2019-05-08meta-author
Slicing, cleaning and kerf analysis of germanium wafers machined by wire electrical discharge machining
This paper investigates the slicing of germanium wafers from single crystal, gallium-doped ingots using wire electrical discharge machining. Wafers with a thickness of 350 μm and a diameter of 66 mm were cut [...]
PAM XIAMEN offers InP Wafer. Detailed wafer information, please refer to below:
1. InP Wafer Specifications
InP(100)
InP (100) Sn-doped
InP-(VGF- Grown) (100) Sn doped, 2″x0.35mm wafer, 1sp
InP (100)undoped
InP (100) undoped, 10×10 x 0.5 mm wafer, 1sp
VGF InP (100) undoped, 2″ x 0.35 [...]
2019-05-06meta-author
CdZnTe monocrystalline wafers
Xiamen Powerway Advanced Material Co.,Ltd., provide CdZnTe monocrystalline wafers in different size for HgCdTe substrate epitaxy. And now PAM-XIAMEN offer specification as follows:
S.No.
Parameters
Detail
1
Undoped Cd1_xZnxTe Single crystal substrates
From wafer to wafer x =0.040± 0.005
On one wafer x =0.040± 0.005
(Twin & micro twins free [...]