Q: After MOCVD, do you anneal the wafer for p-GaN activation?
A:Yes! We will anneal the wafer for p-GaN activation
Q: After MOCVD, do you anneal the wafer for p-GaN activation?
A:Yes! We will anneal the wafer for p-GaN activation
Q:For Si-doped GaN, what are the resistivity and mobility? A:Mobility:150-200Resistivity<0.05ohm.cm,
Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide? A: Sure.
Q:Can you supply 4″ AlGaAs epi wafers for IR LEDs? A:Yes, we can offer 850nm or 620nm for 4” size.
Q:In the test report of blue LED wafers,it shows Vf and IV (mcd). How is this mcd being measured without actually processing the wafer into devices? A:We use prober equipment and contact positive and negative pole, connect current, and then get the voltage and IV.
Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium [...]
Q: Regarding LED epi wafer,does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project. A: Sorry, we can not offer fabrication of [...]
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