GaSb Wafer
PAM-XIAMEN offre wafer GaSb semiconduttori composti - antimonide di gallio che vengono coltivati da LEC (Liquid Encapsulated Czochralski) come grado epi-ready o meccanico con tipo n, tipo p o semi-isolante in diverso orientamento (111) o (100).
- Descrizione
Descrizione del prodotto
PAM-XIAMEN offers Compound Semiconductor GaSb wafer – gallio antimonide grown by LEC(Liquid Encapsulated Czochralski), which can reduce the defects of gallium antimonide. The GaSb wafer is epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. GaSb wafers can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.
Here is the detail specification of wafer:
2 "(50,8 millimetri) GaSb Wafer Specifica
3 "(50,8 millimetri) GaSb Wafer Specifica
4 "(100mm) GaSb Wafer Specifica
2″ GaSb Wafer Specification
tem | Specifications | ||
Dopant | low doped | Zinc | Tellurium |
Conduction Type | P-type | P-type | N-type |
Wafer Diameter | 2″ | ||
Wafer Orientation | (100)±0.5° | ||
Wafer Thickness | 500±25um | ||
Primary Flat Length | 16±2mm | ||
Secondary Flat Length | 8±1mm | ||
Carrier Concentration | (1-2)x1017cm-3 | (5-100)x1017cm-3 | (1-20)x1017cm-3 |
Mobility | 600-700cm2/V.s | 200-500cm2/V.s | 2000-3500cm2/V.s |
EPD | <2×103cm-2 | ||
TTV | <10um | ||
BOW | <10um | ||
WARP | <12um | ||
Laser Marking | upon request | ||
Suface Finish | P/E, P/P | ||
Epi Ready | yes | ||
Package | Single wafer container or cassette |
3″ GaSb Wafer Specification
tem | Specifications | ||
Conduction Type | P-type | P-type | N-type |
Dopant | low doped | Zinc | Tellurium |
Wafer Diameter | 3″ | ||
Wafer Orientation | (100)±0.5° | ||
Wafer Thickness | 600±25um | ||
Primary Flat Length | 22±2mm | ||
Secondary Flat Length | 11±1mm | ||
Carrier Concentration | (1-2)x1017cm-3 | (5-100)x1017cm-3 | (1-20)x1017cm-3 |
Mobility | 600-700cm2/V.s | 200-500cm2/V.s | 2000-3500cm2/V.s |
EPD | <2×103cm-2 | ||
TTV | <12um | ||
BOW | <12um | ||
WARP | <15um | ||
Laser marking | upon request | ||
Suface finish | P/E, P/P | ||
Epi ready | yes | ||
Package | Single wafer container or cassette |
4″ GaSb Wafer Specification
tem | Specifications | ||
Dopant | low doped | Zinc | Tellurium |
Conduction Type | P-type | P-type | N-type |
Wafer Diameter | 4″ | ||
Wafer Orientation | (100)±0.5° | ||
Wafer Thickness | 800±25um | ||
Primary Flat Length | 32.5±2.5mm | ||
Secondary Flat Length | 18±1mm | ||
Carrier Concentration | (1-2)x1017cm-3 | (5-100)x1017cm-3 | (1-20)x1017cm-3 |
Mobility | 600-700cm2/V.s | 200-500cm2/V.s | 2000-3500cm2/V.s |
EPD | <2×103cm-2 | ||
TTV | <15um | ||
BOW | <15um | ||
WARP | <20um | ||
Laser marking | upon request | ||
Suface finish | P/E, P/P | ||
Epi ready | yes | ||
Package | Single wafer container or cassette |
1) 2 "(50,8 millimetri), 3" (76,2 millimetri) GaSb wafer
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:P/low doped;P/Si;P/Zn
Nc(cm-3):(1~2)E17
Mobility(cm2/V ·s):600~700
Growth Method:CZ
Polish:SSP
2) 2 "(50,8 millimetri) GaSb wafer
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:N/low doped;P/Te
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500
Growth Method:LEC
Polish:SSP
3) 2 "(50,8 millimetri) GaSb wafer
Orientation:(111)A±0.5°
Thickness(μm):500±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP
4) 2 "(50,8 millimetri) GaSb wafer
Orientation:(111)B±0.5°
Thickness(μm):500±25;450±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP
5) 2 "(50,8 millimetri) GaSb wafer
Orientation:(111)B 2deg.off
Thickness(μm):500±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP
prodotti relativi:
InAs wafer
InSb wafer
InP wafer
GaAs wafer
GaSb wafer
GaP wafer
Antimoniuro di gallio (GaSb) può essere fornito come wafer con as-taglio, finiture incise o lucidate e sono disponibili in un'ampia gamma di concentrazione di portatori, diametro e spessore.
GaSb material presents interesting gallium antimonide properties for single junction thermophotovoltaic (TPV) devices. GaSb: Te single crystal grown with Czochralski (Cz) or modified Czo- chralski (Mo-Cz) methods are presented and the problem of Te homogeneity discussed. As the carrier mobility is one of the key points for the gallium antimonide crystals, Hall measurements are carried out. We present here some complementary developments based on the material processing point of view: the bulk gallium antimonide crystal growth, the gallium antimonide wafer preparation, and the gallium antimonide wafer etching. Subsequent steps after these are related to the p / no r n/p junction elaboration. Some results obtained for different thin-layer elaboration approaches are presented. So from the simple vapor phase diffusion process or the liquid phase epitaxy process up to the metal organic chemical vapor deposition process, we report some material specificity.
We also offer gallium antimonide wafer epi service, take below as an example:
2”size GaSb epi wafer:
Epi layer: Thikness 0.5 um, undoped/p type GaSb epi layer (undoped InP epi layer also available),
Substrate:2” semi-insulating GaAs
Remark:
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!
More epiwafer information, please read: