Distribution of defects and impurities in gallium arsenide wafers after surface gettering

  • Home
  • News
  • Distribution of defects and impurities in gallium arsenide wafers after surface gettering

Distribution of defects and impurities in gallium arsenide wafers after surface gettering

Distribution of defects and impurities in gallium arsenide wafers after surface gettering
 
Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows high-resistivity material to be obtained with the near-uniform distribution both of electron concentration and of minority carrier lifetime in the GaAs wafers with thickness up to 1.6 mm. These in-depth distribution profiles have been first presented. Moreover, low-temperature photoluminescence (PL) of the GaAs wafers has been studied.
Source: sciencedirect
If you need more information about Distribution of defects and impurities in gallium arsenide wafers after surface gettering,please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.
2013-11-04 , , ,

Share this post

Related Posts

650V GaN FETs Chip for Fast Charge

PAM-XIAMEN offers 650V GaN FETs chip for fast charge. In current market, gallium nitride fast charging sources mainly use 650V GaN chip (GaN FETs) as power switches, and the high-frequency characteristics of gallium nitride are used to make terminal fast charging products smaller in size and higher [...]

2020-11-24meta-author
GaP Substrate-3

PAM XIAMEN offers GaP Substrates (111) . GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp GaP Wafer, Undoped (111) 10x10x0.5 mm, 2sp GaP Wafer, S doped (111) 2″x0.5 mm, 2sp GaP wafer, S doped, (111) orientation, 2″ dia x 0.5mm, 1sp GaP Wafer, undoped (111) [...]

2019-04-22meta-author
LT-GaAs

We offer LT-GaAs wafer for THz, detector, ultra-fast-optical experiments and other applications. 1. 2″ LT-GaAs Wafer Specification: Item Specifications Diamater(mm) Ф 50.8mm ± 1mm Thickness 1-2um or 2-3um Marco Defect Density ≤ 5 cm-2 Resistivity(300K) >108 Ohm-cm Carrier ＜1ps Dislocation Density <1×106cm-2 Useable Surface Area ≥80% Polishing Single side polished Substrate GaAs substrate   Remark: Other conditions: 1) GaAs substrate should be undoped/semi-insulating with (100)orientation. 2) Growth temperature: ~ 200-250 C 2. [...]

2013-10-11meta-author
Epitaxy Wafer of Silicon for Integrated Waveguide Optics

PAM-XIAMEN can offer epitaxy wafer of silicon for manufacturing integrated optical waveguide devices. The silicon epi wafer we offer is grown core layer of Si and lower cladding layer of SiO2 on Si substrate and the waveguide structure is ridged. Due to the large [...]

2022-09-05meta-author
Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer

The dependence of the morphology and crystallinity of an amorphous Ge (a-Ge) interlayer between two Si wafers on the annealing temperature is identified to understand the bubble evolution mechanism. The effect of a-Ge layer thickness on the bubble density and size at different annealing [...]

2019-11-13meta-author
1″ Silicon Wafer-2

PAM XIAMEN offers 1″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [111] ±0.5° 1″ 50 ±10 P/P 1-100 n-type Si:P [100] 1″ 50 ±10 P/P >20 SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 4 wafers n-type Si:P [100] 1″ 280 P/P 1-20 SEMI Prime n-type Si:P [100] 1″ 280 P/E 1-5 SEMI n-type Si:P [100] 1″ 1500 P/E 1-20 Prime, n-type Si:P [100] 1″ 525 P/E 0.05-0.15 SEMI n-type Si:P [111] 1″ 330 P/E FZ >90 Prime p-type Si:B [100] 1″ 775 P/E 8-12 SEMI Prime p-type Si:B [100] 24mm 300 P/E 1-100 Prime, p-type Si:B [100] 1″ 300 P/E 1-10 Prime, p-type Si:B [100] 1″ 500 P/E 1-10 p-type Si:B [100] 1″ 380 P/E 0.003-0.005 SEMI Prime p-type Si:B [100] 1″ 275 P/E 0.002-0.005 Prime n-type Si:P [100] 1″ 50 ±10 P/P >20 SEMI Prime, TTV<5μm, in single wafer trays [...]

2019-03-08meta-author