Wafer Epi per diodo laser
GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).
- Descrizione
Descrizione del prodotto
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:
| substrato di materiale | Capacità materiale | lunghezza d'onda | Applicazione |
| GaAs | GaAs / GalnP / AlGaInP / GaInP | 635nm | |
| Wafer in Epi basato su GaAs | 650nm | Laser a emissione di superficie con cavità verticale (VCSEL) RCLED |
|
| GaAs / GalnP / AlGaInP / GaInP | 660nm | ||
| GaAs / AlGaAs / GalnP / AlGaAs / GaAs | 703nm | ||
| GaAs / GalnP / AlGaInP / GaInP | 780nm | ||
| GaAs / GalnP / AlGaInP / GaInP | 785nm | ||
| Wafer in Epi basato su GaAs | 800-1064nm | Infrarossi LD | |
| GaAs / GalnP / AlGaInP / GaInP | 808nm | Infrarossi LD | |
| Wafer in Epi basato su GaAs | 850nm | Laser a emissione di superficie con cavità verticale (VCSEL) RCLED |
|
| Wafer in Epi basato su GaAs | <870nm | Rilevatore di foto | |
| Wafer in Epi basato su GaAs | 850-1100nm | Laser a emissione di superficie con cavità verticale (VCSEL) RCLED |
|
| GaAs / AlGaAs / GaInAs / AlGaAs / GaAs | 905nm | ||
| GaAs / AlGaAs / InGaAs / AlGaAs / GaAs | 950nm | ||
| Wafer in Epi basato su GaAs | 980nm | Infrarossi LD | |
| Epi-wafer basato su InP | 1250-1600nm | Fotorilevatore di valanghe | |
| Wafer in Epi basato su GaAs | 1250-1600nm /> 2.0um (Strato assorbente InGaAs) |
Rilevatore di foto | |
| Wafer in Epi basato su GaAs | 1250-1600nm / <1.4μm (Strato assorbente InGaAsP) |
Rilevatore di foto | |
| Epi-wafer basato su InP | 1270-1630nm | Laser DFB | |
| Substrato GaAsP / GaAs / GaAs | 1300nm | ||
| Epi-wafer basato su InP | 1310nm | Laser FP | |
| Substrato GaAsP / GaAs / GaAs | 1550nm | Laser FP | |
| 1654nm | |||
| Epi-wafer basato su InP | 1900nm | Laser FP | |
| 2004nm |
About LD Epitaxy Wafer Applications & Market
The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.
The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.
Please see below detail specification of LD epitaxy wafer:
Wafer epi con diodo laser da 703 nm
Wafer epi con diodo laser da 780 nm
Wafer epi con diodo laser da 650 nm
Wafer epi con diodo laser 785nm
Wafer epi con diodo laser 808nm-2
Wafer epi con diodo laser da 850 nm
Wafer epi con diodo laser a 905 nm
Wafer epi con diodo laser 950nm
Wafer epi con diodo laser da 1550 nm
Wafer epi con diodo laser da 1654 nm
Wafer epi con diodo laser 2004nm
GaAs Epitaxy with Thick Growth
GaAs based Epi Structure MOCVD Grown for Light Emitter
Narrow InGaAsP Quantum Well Grown on InP Wafer
InAs Quantum Dot Layers on InP Substrate
Chip a emettitore singolo
Chip LD a emettitore singolo 755nm a 8W
Chip LD a emettitore singolo 808nm @ 8W
Chip LD a emettitore singolo 808nm @ 10W
Chip LD a emettitore singolo 830nm @ 2W
Chip LD a emettitore singolo 880nm @ 8W
Chip LD a emettitore singolo 900 + nm @ 10W
Chip LD a emettitore singolo 900 + nm a 15W
Chip LD a emettitore singolo 905nm a 25W
Chip LD a emettitore singolo 1470nm @ 3W
PAM XIAMEN offre chip singolo laser ad alta potenza 1470/1550 nm come segue:
LD Bare Bar
LD Bare Bar per 780nm @ cavità 2,5 mm
LD Bare Bar per 808nm @ cavità 2mm
Barra nuda LD per 808 nm @ cavità 1,5 mm
LD Bare Bar per 880nm @ cavità 2mm
Barra nuda LD per 940 nm @ cavità 2 mm
LD Bare Bar per 940nm @ cavità 3mm
LD Bare Bar per 940nm @ cavity 4mm
Barra nuda LD per 940 nm @ cavità 2 mm
Barra nuda LD per 976 nm @ cavità 4 mm