Epi Wafer per Laser Diode

Wafer Epi per diodo laser

GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

  • Descrizione

Descrizione del prodotto

Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:

substrato di materiale Capacità materiale lunghezza d'onda Applicazione
GaAs GaAs / GalnP / AlGaInP / GaInP 635nm  
Wafer in Epi basato su GaAs 650nm Laser a emissione di superficie con cavità verticale (VCSEL)
RCLED
GaAs / GalnP / AlGaInP / GaInP 660nm  
GaAs / AlGaAs / GalnP / AlGaAs / GaAs 703nm  
GaAs / GalnP / AlGaInP / GaInP 780nm  
GaAs / GalnP / AlGaInP / GaInP 785nm  
Wafer in Epi basato su GaAs 800-1064nm Infrarossi LD
GaAs / GalnP / AlGaInP / GaInP 808nm Infrarossi LD
Wafer in Epi basato su GaAs 850nm Laser a emissione di superficie con cavità verticale (VCSEL)
RCLED
Wafer in Epi basato su GaAs <870nm Rilevatore di foto
Wafer in Epi basato su GaAs 850-1100nm Laser a emissione di superficie con cavità verticale (VCSEL)
RCLED
GaAs / AlGaAs / GaInAs / AlGaAs / GaAs 905nm  
GaAs / AlGaAs / InGaAs / AlGaAs / GaAs 950nm  
Wafer in Epi basato su GaAs 980nm Infrarossi LD
Epi-wafer basato su InP 1250-1600nm Fotorilevatore di valanghe
Wafer in Epi basato su GaAs 1250-1600nm /> 2.0um
(Strato assorbente InGaAs)
Rilevatore di foto
Wafer in Epi basato su GaAs 1250-1600nm / <1.4μm
(Strato assorbente InGaAsP)
Rilevatore di foto
Epi-wafer basato su InP 1270-1630nm Laser DFB
Substrato GaAsP / GaAs / GaAs 1300nm  
Epi-wafer basato su InP 1310nm Laser FP
Substrato GaAsP / GaAs / GaAs 1550nm Laser FP
  1654nm  
Epi-wafer basato su InP 1900nm Laser FP
  2004nm  

 

About LD Epitaxy Wafer Applications & Market

The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.

The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.

Please see below detail specification of LD epitaxy wafer:

Chip per wafer laser VCSEL

VCSEL Laser Epi Wafer

Wafer epi con diodo laser da 703 nm

808nm diodo laser epi wafer-1

Wafer epi con diodo laser da 780 nm

Wafer epi con diodo laser da 650 nm

Wafer epi con diodo laser 785nm

Wafer epi con diodo laser 808nm-2

Wafer epi con diodo laser da 850 nm

Wafer epi con diodo laser a 905 nm

940nm laser diode epi wafer

Wafer epi con diodo laser 950nm

Wafer laser ad alta potenza da 1060 nm

Wafer epi con diodo laser da 1550 nm

Wafer epi con diodo laser da 1654 nm

Wafer epi con diodo laser 2004nm

GaAs Epitaxy with Thick Growth

GaAs based Epi Structure MOCVD Grown for Light Emitter

Narrow InGaAsP Quantum Well Grown on InP Wafer

InAs Quantum Dot Layers on InP Substrate

 

Chip a emettitore singolo

Chip LD a emettitore singolo 755nm a 8W

Chip LD a emettitore singolo 808nm @ 8W

Chip LD a emettitore singolo 808nm @ 10W

Chip LD a emettitore singolo 830nm @ 2W

Chip LD a emettitore singolo 880nm @ 8W

Chip LD a emettitore singolo 900 + nm @ 10W

Chip LD a emettitore singolo 900 + nm a 15W

Chip LD a emettitore singolo 905nm a 25W

Chip LD a emettitore singolo 1470nm @ 3W

PAM XIAMEN offre chip singolo laser ad alta potenza 1470/1550 nm come segue:

LD Bare Bar

LD Bare Bar per 780nm @ cavità 2,5 mm

LD Bare Bar per 808nm @ cavità 2mm

Barra nuda LD per 808 nm @ cavità 1,5 mm

LD Bare Bar per 880nm @ cavità 2mm

Barra nuda LD per 940 nm @ cavità 2 mm

LD Bare Bar per 940nm @ cavità 3mm

LD Bare Bar per 940nm @ cavity 4mm

Barra nuda LD per 940 nm @ cavità 2 mm

Barra nuda LD per 976 nm @ cavità 4 mm

LD Bare Bar per 1470nm @ cavità 2mm

Barra nuda LD per 1550nm @ cavità 2mm