GaAs (arseniuro di gallio) Wafer

GaAs (arseniuro di gallio) Wafer

As a leading GaAs substrate supplier, PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor undoped and p type with prime grade and dummy grade. The GaAs substrate resistivity depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, undoped one is >=1E7 ohm.cm. The GaAs wafer crystal orientation should be (100) and (111). For (100) orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.

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(Arseniuro di gallio) GaAs Wafer

PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We has used advanced crystal growth technology, vertical gradient freeze(VGF) and GaAs wafer manufacturing process, established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for GaAs wafer cleaning and packaging. Our GaAs wafers include 2~6 inch ingot/wafers for LED, LD and Microelectronics applications. We are always dedicated to improve the quality of currently GaAs wafer substrates and develop large size substrates. The GaAs wafer size offered is in 2”, 3”, 4” and 6”, and the thickness should be 220-700um. Moreover, the GaAs wafer price from us is competitive.

1. GaAs Wafer Specifications

1.1 (GaAs)Arseniuro di gallioWafer per applicazioni LED

Voce Specificazioni Osservazioni
Tipo conduzione SC / tipo n SC / p-tipo con Zn droga Disponibile
metodo di crescita VGF  
drogante Silicio Zn disponibili
Wafer Diamter 2, 3 e 4 pollici Lingotto o come taglio availalbe
cristallo Orientamento (100) 2 °/ 6 ° / 15 ° off (110) Altro misorientation disponibili
DI EJ o degli Stati Uniti  
Concentrazione Carrier (0,4 ~ 2,5) E18 / cm3  
Resistività a RT (1,5 ~ 9) E-3 Ohm.cm  
Mobilità 1500 ~ 3000cm2 / V.sec  
Etch Pit Densità <5000 / cm2  
Marcatura laser su richiesta  
Finitura superficiale P / E o P / P  
Spessore 220 ~ 450um  
epitassia Pronto  
Pacchetto contenitore singolo wafer o cassetta

 

1.2 (GaAs)Arseniuro di gallioWafer per applicazioni LD

Voce Specificazioni Osservazioni
Tipo conduzione SC / tipo n  
metodo di crescita VGF  
drogante Silicio  
Wafer Diamter 2, 3 e 4 pollici Lingotto o come taglio disponibili
cristallo Orientamento (100) 2 °/ 6 ° / 15 ° off (110) Altro misorientation disponibili
DI EJ o degli Stati Uniti  
Concentrazione Carrier (0,4 ~ 2,5) E18 / cm3  
Resistività a RT (1,5 ~ 9) E-3 Ohm.cm  
Mobilità 1500 ~ 3000 cm2 / V.sec  
Etch Pit Densità <500 / cm2  
Marcatura laser su richiesta  
Finitura superficiale P / E o P / P  
Spessore 220 ~ 350um  
epitassia Pronto  
Pacchetto contenitore singolo wafer o cassetta

 

1.3 (GaAs)Arseniuro di gallioWafer, semi-isolante per Microelectronics Applications

Voce Specificazioni Osservazioni
Tipo conduzione Isolante  
metodo di crescita VGF  
drogante non drogato  
Wafer Diamter 2, 3 e 4 pollici  Ingot available
cristallo Orientamento (100)+/- 0.5°  
DI EJ, Stati Uniti o tacca  
Concentrazione Carrier n / a  
Resistività a RT > 1E7 Ohm.cm  
Mobilità > 5000 cm2 / V.sec  
Etch Pit Densità <8000 / cm2  
Marcatura laser su richiesta  
Finitura superficiale P / P  
Spessore 350 ~ 675um  
epitassia Pronto  
Pacchetto contenitore singolo wafer o cassetta

 

1.4 6″ (150mm)(GaAs)Arseniuro di gallioWafer, semi-isolante per Microelectronics Applications

Voce Specificazioni Osservazioni
Tipo conduzione Semi-isolante  –
Grow Metodo VGF  –
drogante non drogato  –
Tipo N  –
Diamater (mm) 150 ± 0.25  –
Orientamento (100)0°±3.0°  –
NOTCH Orientamento 〔010〕±2°  –
NOTCH Deepth (mm) (1-1.25)mm   89°-95°  –
Concentrazione Carrier please consult our sales team  –
Resistività (ohm.cm) >1.0×107 or 0.8-9 x10-3  –
Mobilità (cm2 / vs) please consult our sales team  –
Dislocazione please consult our sales team  –
Spessore (micron) 675 ± 25  –
Esclusione bordo per Arco e ordito (mm) please consult our sales team  –
Arco (um) please consult our sales team  –
Ordito (um) ≤20.0  –
TTV (um) ≤10.0  –
TIR (um) ≤10.0  –
LFPD (um) please consult our sales team  –
lucidatura P / P Epi-Ready  –

 

1.5 2″(50.8mm) LT-GaAs (Bassa temperatura Arseniuro di Gallio-Grown) Wafer Specifiche

Voce Specificazioni
Tipo conduzione Semi-isolante
Grow Metodo VGF
drogante non drogato
Tipo N
Diamater (mm) 150 ± 0.25
Orientamento (100)0°±3.0°
NOTCH Orientamento 〔010〕±2°
NOTCH Deepth (mm) (1-1.25)mm   89°-95°
Concentrazione Carrier please consult our sales team
Resistività (ohm.cm) >1.0×107 or 0.8-9 x10-3
Mobilità (cm2 / vs) please consult our sales team
Dislocazione please consult our sales team
Spessore (micron) 675 ± 25
Esclusione bordo per Arco e ordito (mm) please consult our sales team
Arco (um) please consult our sales team
Ordito (um) ≤20.0
TTV (um) ≤10.0
TIR (um) ≤10.0
LFPD (um) please consult our sales team
lucidatura P / P Epi-Ready
 
* Anche possiamo fornire poli GaAs cristallo bar, 99,9999% (6N).

 

2. GaAs Wafer Market & Application

Gallium arsenide is an important semiconductor material. It belongs to group III-V compound semiconductors and the zinc blende crystal lattice structure, with a lattice constant of 5.65×10-10m, a melting point of 1237°C, and a band gap of 1.4 electron volts. Gallium arsenide can be made into semi-insulating high-resistance materials, which can be used to make integrated circuit substrates, infrared detectors, gamma photon detectors, etc. Because its electron mobility is 5 to 6 times greater than silicon, SI GaAs substrate has been importantly used in the fabrication of microwave devices and high-speed digital circuits. Semiconductor devices fabricated on gallium arsenide have the advantages of high frequency, high temperature, low temperature performance, low noise, and strong radiation resistance, which make the GaAs substrate market enlarge.

 

3. Test certificate of GaAs wafer can include below analysis if necessary:

1/Surface roughness of Gallium Arsenide including front side and backside(nanometers).

2/Doping concentration of Gallium Arsenide(cm-3)

3/EPD of Gallium Arsenide(cm-2)

4/Mobility of Gallium Arsendie(V.sec)

5/X-ray diffraction analysis (rocking curves) of Gallium Arsenide: Diffraction reflection curve half-width

6/Low-temperature photoluminescence (emission spectra in the range 0.7-1.0 μm) of Gallium Arsenide: The fraction of exciton photoluminescence in the emission spectrum of the near-IR range at a temperature of 4K or 5 K and an optical excitation density of 1 W / cm2

7/Transmission rate or Absorption coefficient: for instant, we can measure absorption coefficient of single crystal undoped GaAs at 1064nm: <0.6423 cm-1, and this corresponds to a transmission minimum of 33.2% for an exactly 6.5mm thick blank at 1064nm.

 

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