GaN HEMT epitax

GaN HEMT epitax

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology. Thanks to GaN technology, PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon, and AlGaN/GaN on sapphire template.

  • Descrizione

Descrizione del prodotto

GaN HEMT epitaxial wafer is a multilayer film grown epitaxially on a substrate, which usually includes a nucleation layer, a transition layer, a buffer layer, a channel layer, a barrier layer, a cap layer, and a passivation layer from bottom to top. The nucleation layer, like AlGaN or AlN, is used to prevent the substrate material from diffusing into the GaN epitaxial layer. The transition layer may contain hierarchical AlGaN, AlN/GaN superlattice or multilayer AlN to balance the stress between the GaN and the substrate. The higher the Al content in the barrier layer of AlGaN, the higher the 2DEG concentration at the heterojunction. Meanwhile, the lower the threshold voltage of the device, and the higher the current capacity. As the Al ratio increasing, the degree of heterogeneous crystal lattice mismatch will be higher, resulting in a decrease in gallium nitride HEMT electron mobility and a decrease in current capacity.

The High Electron Mobility Transistor (HEMT) is developed based on GaN with unique heterostructure and two-dimensional electron gas. The GaN HEMT advantages include high breakdown strength, low on-resistance and faster The switching speed, which is very suitable for medium and low voltage and medium and small power systems, such as travel adapters, wireless chargers, AC-DC converters, smart home appliances, etc. The epitaxial wafer with HEMT structure is more attractive currently for high-frequency converters, in which GaN HEMT breakdown voltage is 600~650 V. With the rapid development of gallium nitride HEMT epi technology, the price of GaN HEMT devices will be competitive, which can gain large GaN HEMT market for GaN HEMT manufacturers. Moreover, due to the gallium nitride HEMT reliability, it can be widely used in industrial fields, such as photovoltaic inverters, energy storage systems, and electric vehicles.

1. GaN HEMT Material: Available size:2”,4”,6”,8”:

More specific parameters of gallium nitride HEMT wafer for D-mode GaN HEMTs, E-mode GaN HEMTs, GaN HEMT power amplifier and RF, please refer to:

GaN on Si for Power, D-mode

GaN on Si for Power, E-mode

GaN su Si per RF

GaN on Sapphire for Power

GaN on Sapphire for RF

GaN on SiC for RF

GaN on GaN

We are expert in HEMT structure, we also offer GaN HEMT epi wafer for many years.
For silicon substrate, we need to know if you grow GaN HEMT on silicon for POWER or RF, it is different. If needed, please contact for details.
For SiC, you should use semi-insulating.
Or you can buy AlGaN/GaN HEMT structure on these three structure from us.

2. Now we show you an example as follows:

2.1  2 "(50,8 millimetri) GaN HEMT epitassiali Wafer

We offer 2″(50.8mm) gallium nitride HEMT Wafers, the GaN HEMT structure is as follows:

Struttura (dall'alto al basso):

* Tappo non drogato GaN (2 ~ 3nm)

AlxGa1-XN (18 ~ 40nm)

AlN (strato tampone)

un drogato GaN (2 ~ 3um)

substrato di zaffiro

* Possiamo usare Si3N per sostituire GaN sulla parte superiore, l'adesione è forte, è rivestito da sputtering o PECVD.

2.2 AlGaN/GaN HEMT Epi Wafer on sapphire/GaN

Strato # Composizione Spessore X drogante Concentrazione Carrier
5 GaN 2Nm
4 AlxGa1–xN 8Nm 0.26
3 AIN 1nm Un-drogato
2 GaN ≥1000 nm Un-drogato
1 Strato Buffer / Transizione
Substrato Silicio 350μm / 625μm

2.3  2″(50.8mm),4″ (100mm)AlGaN/GaN HEMT Epi Wafer on Si

2.3.1 Specifications for Aluminium Gallium Nitride (AlGaN) / Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) sul substrato di silicio.

Requisiti Specificazione
AlGaN / GaN HEMT Epi wafer di Si  
/ GaN HEMT struttura AlGaN Fare riferimento 1.2
substrato di materiale Silicio
Orientamento <111>
metodo di crescita Float Zone
Tipo conduzione P o N
Formato (pollice) 2” , 4”
Spessore (micron) 625
Didietro Ruvido
Resistività (Ω-cm) >6000
Arco (um) ≤ ± 35

2.3.2 Epi structure: Crack-free Epilayers

Strato # Composizione Spessore X drogante Concentrazione Carrier
5 GaN 2Nm
4 AlxGa1–xN 8Nm 0.26
3 AIN 1nm Un-drogato
2 GaN ≥1000 nm Un-drogato
1 Strato Buffer / Transizione
Substrato Silicio 350μm / 625μm

2.3.3 Electrical Properties of the AlGaN/GaN HEMT structure

2DEG Mobilità (a 300 K): ≥1,800 cm2 / Vs

2DEG Trasporto Fogli Densità (a 300 K): ≥0.9 × 1013 cm-2

RMS Roughness (AFM): ≤ 0,5 nm (5.0 micron × 5,0 micron area di scansione)

2.4  2″(50.8mm)AlGaN/GaN on sapphire

Per le specifiche di AlGaN / GaN sul modello di zaffiro, si prega di contattare il nostro ufficio vendite:

GaN HEMT Applications: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.

3. Explanation of AlGaN/Al/GaN HEMTs:

HEMT nitruro vengono intensamente sviluppati per elettronica ad alta potenza in applicazioni amplificazione e commutazione di potenza ad alta frequenza. Spesso elevate prestazioni in esercizio DC viene perso quando il HEMT è acceso - per esempio, il contro corrente comprime quando il segnale di gate è pulsata. Si pensa che tali effetti sono riportate intrappolamento di cariche che maschera l'effetto del cancello sul flusso di corrente. Field-piastre sugli elettrodi di sorgente e porta sono stati utilizzati per manipolare il campo elettrico nel dispositivo, mitigare tali fenomeni corrente-collasso.

4. GaN EpitaxialTechnology — Customized GaN epitaxy on SiC,Si and Sapphire substrate for HEMTs, LEDs:


PAM XIAMEN Offers Epitaxial growth of AlGaN/GaN based HEMT on Si wafers

5. GaN Device:



6. Test Characterization Equipment:

Contactless Sheet Resistance

Laser Thin Film Thickness Mapping

High Temp/High Humidity Reverse Bias

Thermal Shock

DIC Nomarski Microscope

Atomic Force Microscope (AFM)

Surface Defectivity Scan

High Temp Reverse Bias

4PP Sheet Resistance

Contactless Hall Mobility

Temperature Cycle

X-ray Diffraction (XRD)/Reflectance (XRR)

Ellipsometer Thickness


CV Tester

7. Foundry Fabrication:

we also offer foundry GaN HEMT fabrication in the following process as follows:

MOCVD Epitaxy

Metal Sputtering/E-Beam

Dry/Wet Metal/Dielectric Etch

Thin Film PECVD/LPCVD/Sputtering

RTA/Furnace Annealing

Photolithography (0.35um min. CD)

Ion Implantation


The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!

More fabrication services, please visit: GaN Fabrication Services for HEMT Devices

GaN/SiC HEMT epi-wafers

Aluminium gallium arsenide epi wafer

650V GaN FETs Chip for Fast Charge

GaN MOSFET Structure:

GaN MOSFET Structure on SiC Substrate

More about GaN HEMT structures, please read:

What Affects 2DEG of AlGaN/GaN HEMT Wafer?

Potrebbe piacerti anche ...