substrato GaN autoportante

Descrizione del prodotto

substrato GaN autoportante

As a leading GaN substrate supplier, PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer  which is Bulk GaN substrate for UHB-LED, LD and fabrication as MOS-based devices. Grown by hydride vapour phase epitaxy (HVPE) technology, our substrato GaN for III-nitride devices has  low defect density and less or free macro defect density. The GaN substrate thickness is 330~530μm.

In addition to power devices, gallium nitride semiconductor substrates are increasingly used in the manufacture of white light LEDs because the GaN LED substrates provide improved electrical characteristics and their performance exceeds current devices. Moreover, the rapid development of gallium nitride substrate technology has led to the development of high-efficiency GaN free standing substrates with low defect density and free macro defect density. Therefore, such GaN substrates can be increasingly used to white LEDs. As a result, the bulk GaN substrate market is growing rapidly. By the way, bulk GaN wafer can be used for testing vertical power device concepts.

Specificazione di substrato autoportante GaN

 Qui mostra specifica di particolare:

4″ N type Si doped GaN（Gallium Nitride) Free-standing Substrate

4″ N type Undoped GaN（Gallium Nitride) Free-standing Substrate

4″ Semi-Insulating GaN（Gallium Nitride) Free-standing Substrate

2″ Si doped GaN（Gallium Nitride) Free-standing Substrate

2″ Undoped GaN（Gallium Nitride) Free-standing Substrate

2″ Semi-Insulating GaN（Gallium Nitride) Free-standing Substrate

15mm, 10mm, 5 millimetriFree-standingGaN substrato

Nota:

Validation Wafer: Considering convenience of usage, PAM-XIAMEN offers 2″ Sapphire Validation wafer for below 2″ size Freestanding GaN Substrate

Applicazione di GaN substrato

Solid State Lighting: dispositivi GaN sono utilizzati come ultra luce ad alta luminosità diodi (LED), televisori, automobili e illuminazione generale

DVD Storage: Blue laser diodes

Power Device: Devices fabricated on GaN bulk substrate are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites

Pure Gallium Nitride Substrate Ideal for III-Nitrides re-growth

Stazioni base wireless: transistori di potenza RF

Wireless Broadband Access: MMICs ad alta frequenza, RF-Circuiti MMICs

Sensori di pressione: MEMS

Sensori di calore: rilevatori di Pyro-elettrici

Power condizionata: segnale misto GaN Integrazione / Si

Elettronica Automotive: elettronica ad alta temperatura

Linee di trasmissione di potenza: l'elettronica ad alta tensione

Sensori Telaio: rilevatori di raggi UV

Solar Cells: GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride

(InGaN) leghe ideali per creare materiale cella solare. A causa di questo vantaggio, celle solari InGaN cresciuti su substrati GaN sono pronti a diventare uno dei più importanti nuove applicazioni e mercato di crescita per GaN wafer di substrato.

Ideale per HEMT FET,