Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers
Thick high quality gallium nitride (GaN) layers presenting a dislocation density reduced to 6×106 cm−2were grown by hydride vapour phase epitaxy (HVPE). Scanning electron microscopy (SEM) characterizations, X-ray double diffraction (XRD) measurements, photoluminescence and [...]
980 Single Mode Laser Chip (PAM200827-LD)
PAM XIAMEN offers 980 Single Mode Laser Chip
Powerwaywafer
980 Single mode laser chip property
Minimum
Typical
Maximum
Central Wavelength 969 974 979 nm
970
980
990
Output Power (mW)
300
400
500
Working Mode CW
—
—
—
Longitudinal mode Single
—
—
—
Spectrum Width
—
—
—
Emitter Width
—
—
—
Cavity Width (μm)
640
650
660
Cavity Length (μm)
4490
4500
4510
Cavity Thickness (μm)
115
125
135
Fast Axis Divergence(FWHM) 30 Deg
—
—
—
Slow Axis Divergence (FWHM) [...]
2020-09-16meta-author
PAM XIAMEN offers LD Bare Bar for 976nm@cavity 4mm.
Brand: PAM-XIAMEN
Wavelength: 976nm
Filling Factor: 10%
Output Power: 35W
Cavity Length:4mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM-H01 series are CZT crystal based hemispherical detectors which have a special structure. They can detect X-ray and middle to high energy γ-ray in a high energy resolution.
CZT Asymmetry Detector
1. CZT High Energy Resolution Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
5.0×5.0mm2
10.0×10.0mm2
Thickness
2.50mm
5.0mm
Electrode material
Au
Operation temperature
0℃-+40℃ (standard)/ -20℃-+40℃ (customized)
Operation voltage
≤900V
Energy range
10KeV~2.6MeV
Energy resolution(22℃)
<2.5%@662MeV
Peak-compton ratio
>3
Storage temperture
10℃~40℃
Storage humidity
20%-80%
Remarks
Customized [...]
2019-04-24meta-author
PAM XIAMEN offers Si wafer Thickness: 675 ± 25 um.
Si wafer
Method: Cz
Orientation: <111>
Type: P-Type
Dopant: Boron
Resistivity: 0.1-13 ohm.cm
Diameter: 150 ± 0.1 mm
Thickness: 675 ± 25 um
Chamfer
Front side: Epi-ready
Back side: etched
BOW < 30um
Warp [...]
2019-08-22meta-author
Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields
We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs [...]
2013-03-19meta-author