Analyses of Five Major LED Manufacturers Vertical Integration Strategies (Part 1)
Upheld as the classical business models in the LED industry, Dutch lighting giant Philips and leading German lighting manufacturer Osram business models have been the most discussed among market insiders. The two European companies vertical integration [...]
2016-05-04meta-author
Highlights
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A effective annealing method was adopted for CdMnTe:In crystals with different thickness.
•
The crystal quality and the detector performance were improved remarkably after annealing.
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The detectors can meet the requirement of gamma-ray detection for different energies.
Abstract
Radiation detectors with different thickness are needed to detect gamma rays [...]
2017-12-11meta-author
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2797
p-type Si:B
[100]
4″
220 ±10
P/E
FZ >10,000
SEMI Prime, 1Flat, Empak cst
PAM2798
p-type Si:B
[100]
4″
230 ±10
P/E
FZ >10,000
SEMI Prime, 1Flat, Empak cst
PAM2799
p-type Si:B
[100-4° towards[110]] ±0.5°
4″
525
P/E
FZ [...]
2019-02-22meta-author
Germanium was an early transistor material. Now its charge-carrying abilities and advanced fabrication technology make it an attractive material for future chips. As a proof of concept, our team used germanium-on-insulator wafers to construct inverters containing first planar transistors and then FinFETs
Germanium was first [...]
2019-08-28meta-author
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
2″ Diameter Wafers [...]
2019-05-15meta-author
PAM XIAMEN offers 1″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111] ±0.5°
1″
50 ±10
P/P
1-100
n-type Si:P
[100]
1″
50 ±10
P/P
>20
SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 4 wafers
n-type Si:P
[100]
1″
280
P/P
1-20
SEMI Prime
n-type Si:P
[100]
1″
280
P/E
1-5
SEMI
n-type Si:P
[100]
1″
1500
P/E
1-20
Prime,
n-type Si:P
[100]
1″
525
P/E
0.05-0.15
SEMI
n-type Si:P
[111]
1″
330
P/E
FZ >90
Prime
p-type Si:B
[100]
1″
775
P/E
8-12
SEMI Prime
p-type Si:B
[100]
24mm
300
P/E
1-100
Prime,
p-type Si:B
[100]
1″
300
P/E
1-10
Prime,
p-type Si:B
[100]
1″
500
P/E
1-10
p-type Si:B
[100]
1″
380
P/E
0.003-0.005
SEMI Prime
p-type Si:B
[100]
1″
275
P/E
0.002-0.005
Prime
n-type Si:P
[100]
1″
50 ±10
P/P
>20
SEMI Prime, TTV<5μm, in single wafer trays [...]
2019-03-08meta-author