Q: Can you offer some SiC(0001) wafers with low but intentionnal misorientation in the 1° to 2° range?
A: We can offer misorientation in low degree, no problem.
Q: Can you offer some SiC(0001) wafers with low but intentionnal misorientation in the 1° to 2° range?
A: We can offer misorientation in low degree, no problem.
Q: SiC wafer reclaim, can you gurantee surface roughness<=0.3nm? A: Sure, no problem
PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2. Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI c doped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, [...]
Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide? A: Sure.
Q: After MOCVD, do you anneal the wafer for p-GaN activation? A:Yes! We will anneal the wafer for p-GaN activation
Q We actually want to check our reflectance (mirror type) measurement method on an LED structure on a PSS wafer. Would it be possible to get the same LED structure on both a PSS wafer and a single-side polished wafer so we can compare [...]
Q:We want to know the refractive index of these SiC wafers? A:The refractive index is no=2.707, ne=2.755
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