PAM XIAMEN offers Mo – Molybdenum Substrates (polycrystalline).

General Properties  for Molybdenum

Symbol                 Mo
Atomic Number      42
Atomic Weight:      95.96 g/mol
Crystal structure:   BCC
Lattice constant at room temperature :   0.315 nm
Density:                10.28 g/cm3
Melting Point:        2623 °C
Boiling Point:         4639 °C

Mo Polycrystalline Substrate: 1″x1″ x 0.5 mm, two sides polished

Mo Polycrystalline Substrate: 10 x 10 x 0.5mm, two sides polished

Mo-Mn/Ni on Al2O3 Purity: 96% size: 12.6 x 8 .6x 0.5mm , Coating Mo-Mn: 8um min. Ni :2um Min. size: 11.2×7.2mm

Mo-Mn/Ni on Al2O3 Purity: 96% size: 6.2 x 8 x 0.5mm , Coating Mo-Mn: 8um min. Ni :2um Min. size: 4.7×6.55mm

Mo – Molybdenum Polycrystalline Metallic Foil: 200mm x 100mm x 0.1mm(thickness)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.