PAM XIAMEN offers NdGaO3 Neodymium Gallate Crystal Substrates.
Main Parameters | |
Growth Method | orthogonal |
Unit cell constant | a=5.43、b=5.50、c=7.71 |
Melt point(℃) | 1600℃ |
Density | 7.57g/cm3 |
Dielectric constants | 25 |
Growth method | hanging maneuver method |
Size | 10×3, 10×5, 10×10, 15×15, 20×15, 20×20 |
Ф15, Ф20, Ф1″, Ф2″, Ф2.6″ | |
Thickness | 0.5mm, 1.0mm |
Polishing | Single or double |
Crystal orientation | <100> <110> <111> |
redirection precision | ±0.5° |
Redirection the edge: | 2°(special in 1°) |
Angle of crystalline | Special size and orientation are available upon request |
Ra: | ≤5Å(5µm×5µm) |
NdGaO3 crystal is a new single-crystal substrate material developed in recent years. NdGaO3 substrates are mainly used for high-temperature superconductors (YBCO) and magnetic Epitaxial films growth, because NdGaO3 and YBCO have small lattice mismatch (~0.27%), and no structural phase change at the crystal interface.
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.