Prodotti

GaN HEMT epitax

GaN wafer

PAM-XIAMEN offre substrato nitruro di gallio wafer per UHB-LED, nitruro di gallio wafer, LD e altri dispositivi a semiconduttore.

SiC Wafer Substrate (Silicon Carbide)

SiC Wafer

Silicio Carbideï¼SiC) Wafer PAM-XIAMENÂ offre carburo di silicio wafer crytal e epitassia, che viene utilizzato per i dispositivi optoelettronici, dispositivi ad alta potenza, alta sovratemperature, ad alta frequenza Dispositivi di alimentazione

GaAs Wafer

GaAs Wafer

PAM-XIAMEN offre gallio wafer substrato e epitassia a LED, LD e applicazioni microelettroniche

GaSb Wafer

semiconduttori composti

PAM-XIAMEN offre indio Semiconductor Wafer: InSb, InP, InAs, GaSb, Gap

Ge (Germanio) cristalli singoli e wafer

Germanio Wafer

PWAMÂ offre materiali semiconduttori, (Ge) germanio monocristalli e Wafer coltivati ​​da VGF / LEC

products

CdZnTe Wafer

Cadmio zinco (CdZnTe o CZT) è un nuovo semiconduttore

wafer product

Wafer di silicio

PAM-XIAMEN, a silicon wafer manufacturing company, offers silicon wafer: FZ Silicon wafer, Test Wafer Monitor Wafer Dummy Wafer, Test Wafer,CZ wafer, epitaxial wafer, polished wafer, etching wafer.

The silicon wafer manufacturing process is crystal pulling, silicon wafer dicing, silicon wafer grinding, chamfering, etching, polishing, cleaning and inspection, among which crystal pulling, silicon wafer polishing and inspection are the core links of silicon wafer manufacturing. As the basic semiconductor substrate, silicon wafers must have high standards of purity, surface flatness, cleanliness, and impurity contamination to maintain the original designed functions of the chip. The high-specification requirements of semiconductor silicon wafers make its manufacturing process complicated. The four core steps include polysilicon purification and polysilicon ingot casting, single crystal silicon wafer growth, and silicon wafer cutting and shaping. As a raw material for wafer fab, the quality of silicon wafers directly determines the stability of the silicon wafer application process. Large-size silicon wafers have become the future development trend of silicon wafers. In order to improve production efficiency and reduce costs, more and more large-size silicon wafers are used.

wafer product

fabbricazione di wafer

PAM-XIAMEN Offerte piastra photoresist con fotoresist e fotomaschera, e di fornire Nanolitografia (fotolitografia): preparazione della superficie, fotoresist applicare, Soft cuocere, Allineamento, esposizione, sviluppo, Hard cuocere, Develop ispezionare, Etch, di rimozione di photoresist (striscia), l'ispezione finale.

  • 12 "Prime Grade Silicon Wafer

    PAM-XIAMEN offer 300mm bare silicon wafers (12 inch) in prime grade, n type or p type, and the 300mm silicon wafer thickness is 775±15. Compared to other silicon wafer suppliers, Powerway Wafer’s silicon wafer price is more competitive with higher quality. 300mm silicon wafers have a higher yield per wafer than pervious large diameter silicon wafers.

  • 12 "Silicon wafer 300 millimetri TOX (Si termica Ossidazione wafer)

    PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.

  • 12 "Test Grade Silicon Wafer

    PAM-XIAMEN offers 300mm bare silicon wafers (12 inch) dummy, test grade, n type or p type. Compared to other silicon wafer suppliers, Powerway Wafer offers professional service with competitive prices.

  • Epi Wafer per Laser Diode

    GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

  • Float-Zone Mono-Crystalline Silicon

    PAM-XIAMEN può offrire wafer di silicio float zone, che si ottiene con il metodo Float Zone. Le barre di silicio monocristallino vengono ottenute attraverso la crescita della zona flottante e quindi trasformano le barre di silicio monocristallino in wafer di silicio, chiamati wafer di silicio a zona flottante. Poiché il wafer di silicio fuso a zona non è in contatto con il crogiolo di quarzo durante il processo di silicio a zona flottante, il materiale di silicio è in uno stato sospeso. Pertanto, è meno inquinato durante il processo di fusione in zona flottante del silicio. Il contenuto di carbonio e il contenuto di ossigeno sono inferiori, le impurità sono inferiori e la resistività è maggiore. È adatto per la produzione di dispositivi di potenza e alcuni dispositivi elettronici ad alta tensione.

  • Servizi di fonderia di wafer

    PAM-XIAMEN provides wafer foundry services with advanced semiconductor process technology and benefit from our upstream experiences of substrate and wafer expaxy, 

    PAM-XIAMEN is to be the most advanced wafer technology and foundry services for fabless companies,IDMs and researchers.

     

  • Test di Wafer Wafer Monitor Dummy Wafer

    In qualità di produttore di wafer fittizio, PAM-XIAMEN offre wafer fittizio in silicone / wafer di prova / wafer di monitoraggio, che viene utilizzato in un dispositivo di produzione per migliorare la sicurezza all'inizio del processo di produzione e viene utilizzato per il controllo della consegna e la valutazione della forma del processo. Poiché i wafer fittizi di silicio vengono spesso utilizzati per esperimenti e test, le dimensioni e lo spessore degli stessi sono fattori importanti nella maggior parte delle occasioni. Sono disponibili wafer fittizi da 100 mm, 150 mm, 200 mm o 300 mm.

  • Cz Mono-silicio cristallino

    PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.

  • Epitassiale di silicio Wafer

    Silicon Epitaxial Wafer(Epi Wafer) is a layer of epitaxial silicon single crystal deposited onto a single crystal silicon wafer(note: it is available to grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial silicon layer. It also can be used for thin film transistor.

  • Wafer lucido

    PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

  • Acquaforte Wafer

    The etching silicon wafers offered by PAM-XIAMEN are N type or P type etching wafers, which have low roughness, low reflectivity and high reflectivity. The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, reducing the costs.

  • Fotoresist di nanofabbricazione

    PAM-XIAMEN offre piastra fotoresist con fotoresist