Will cell phone windows come to the rescue?
Will cell phone windows come to the rescue?
PAM XIAMEN offers Niobium( Nb) substrate ( Polycrystalline). Niobium( Nb) substrate ( Polycrystalline) , 10x10x0.5 mm, 1 side polished Niobium( Nb) substrate ( Polycrystalline) Purity: 99.5% Size: 10x10x0.5 mm Surface finish: One side optical polished Surface finish (RMS or Ra) : N/A General Properties [...]
There are three basic types of semiconductor materials: intrinsic semiconductors, extrinsic semiconductors, also known as impurity semiconductors. Both types of semiconductor materials can be supplied by PAM-XIAMEN. 1. What Is Intrinsic Semiconductor? Intrinsic semiconductor refers to a pure semiconductor that is completely free of impurities and [...]
We present a numerical study of the electronic and optical properties of a model single-element superlattice made of a periodic sequence of relaxed and strained regions of a germanium crystal, realized by means of an externally applied strain. We adopt the tight-binding model to [...]
PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows: 1. N Type GaN Substrate Datasheet 1.1 4″(100mm) Undoped Free-standing GaN Substrate Item PAM-FS-GaN100-U Conduction Type Undoped Size 4″(100)+/-1mm Thickness 350-450um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length – Secondary Flat Location (11-20)+/-3° Secondary Flat Length – Resistivity(300K) <0.5Ω·cm Dislocation Density <5×10^6cm-2 FWHM – TTV <=35um BOW <=50um Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished Back Surface:1.Fine ground 2.Rough grinded Usable Area ≥ 90 [...]
We quantified the size and concentration of Te inclusions along the lateral- and the growth-directions of a ∼6 mm-thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then [...]
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 SSP Boron P+ 100 57,5 ± 2,5 100 ± 1 0.0 ± 5.0 ° 0.001 – 100 Ohmcm 150 ± 0.5 mm 675 ± 200 µm 100 20 100 6 SSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° > [...]
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