Cristallo Boule SiC (carburo di silicio).

Cristallo Boule SiC (carburo di silicio).

PAM-XIAMEN offers SiC(Silicon Carbide) Boule Crystal with available size:2”,3”,4”,6” with two available length:5~10mm or 10~15mm. Fix size is workable such as 10mm, please see below specification of 4”size and 6”size:

1. Specifications of SiC Boule Crystal

No.1: 4″ SiC Boule Crystal, Production Grade
Polytype: Production- 4H
Diameter: Production-100,0 mm+/-0,2 mm
Carrier type: Production-N-type
Resistivity: Production-0,015~0,028 Ohm-cm
Orientation: Production–4,0˚±0,5˚
Primary flat orientation: Production {10-10}±5,0˚
Primary Flat Length: Production 32,5 mm±2,5 mm
Secondary flat orientation (5%): Production-Si face 90˚ CCW from orientation flat/ C face 90˚ CCW from orientation flat
Secondary Flat Length: Production-18,0 mm±2,0mm.
Cracks by high intensity light: Production- ≤1 mm each with radial depth
Hex Plates by high intensity light: Production <5% (Cumulative area <5%)
Micropipe density: Production-<5 /сm2
Option1:Thickness: 10~15mm
Option2:Thickness: 5~10mm

No.2: 4″ SiC Boule Crystal, Dummy Grade
Polytype: Dummy- 4H
Diameter: -100,0 mm+/-0,2 mm
Carrier type: N-type
Resistivity: -0,015~0,028 Ohm-cm
Orientation:-4,0˚±0,5˚
Primary flat orientation:{10-10}±5,0˚
Primary Flat Length:32,5 mm±2,5 mm
Secondary flat orientation (5%):Si face 90˚ CCW from orientation flat/ C face 90˚ CCW from orientation flat
Secondary Flat Length: -18,0 mm±2,0mm.
Cracks by high intensity light:- 3mm ≤4 mm in radial depth
Hex Plates by high intensity light: <10% (Cumulative area <10%)
Micropipe density:<5 0/сm2
Option1:Thickness: 10~15mm
Option2:Thickness: 5~10mm

No.3: 6″ SiC Boule Crystal,Production Grade
Polytype: Production- 4H
Diameter: Production-150,0 mm+/-0,2 mm
Carrier type: Production-N-type
Resistivity: Production-0,015~0,028 Ohm-cm
Orientation: Production–4,0˚±0,5˚
Primary flat orientation: Production {10-10}±5,0˚
Primary Flat Length: Production 47,5 mm±2,5 mm
Secondary flat orientation: N/A
Secondary Flat Length: N/A
Cracks by high intensity light: Production- ≤1 mm each with radial depth
Hex Plates by high intensity light: Production <5% (Cumulative area <5%)
Micropipe density: Production-<5 /сm2
Option1:Thickness: 10~15mm
Option2:Thickness: 5~10mm

No.4: 6″ SiC Boule Crystal,Dummy Grade
Polytype: Dummy – 4H
Diameter: 150,0 mm+/-0,2 mm
Carrier type: N-type
Resistivity: 0,015~0,028 Ohm-cm
Orientation: 4,0˚±0,5˚
Primary flat orientation: {10-10}±5,0˚
Primary Flat Length:47,5 mm±2,5 mm
Secondary flat orientation: N/A
Secondary Flat Length: N/A
Cracks by high intensity light:3 mm
≤4 mm in radial depth
Hex Plates by high intensity light: <10% (Cumulative area <10%)
Micropipe density: -<50 /сm2
Option1:Thickness: 10~15mm
Option2:Thickness: 5~10mm

 

Cristallo Boule SiC (carburo di silicio).

Cristallo Boule SiC (carburo di silicio).

 

 

 

 

 

 

 

 

2. Why do SiC Ingot Need High Temperature Annealing?

SiC crystals prepared by PVT sublimation usually have defects such as dislocations, microchannels, stacking faults, multi-type inclusions and inclusions. And these defects, such as the distortion between the above defect structure and the surrounding normal lattice point, will generate stress field around. The non-uniform growth of SiC crystal will also produce stress. The existence of stress can easily cause cracks in the later processing (such as rounding, surface grinding, multi-wire cutting, etc.), which greatly reduces the yield of SiC wafers.

In order to improve the quality of SiC crystal and reduce the structural defects and thermal stress, the SiC crystal must be annealed at high temperature. This process can be basically divided into three processes: heating – heat preservation – cooling, which can be repeated for many times. Due to the high temperature resistance of SiC crystal, in order to minimize the thermal stress, the annealing temperature of the SiC wafer is relatively high, generally around 1800℃.

Per ulteriori informazioni potete contattarci via e-mail all'indirizzovictorchan@powerwaywafer.com e powerwaymaterial@gmail.com

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