PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
SI.
Undoped
VGF
-100
>1E7
600-650
P/E
PRIME
76.2
SI.
Undoped
VGF
-100
>1E7
610-660
P/P
EPI
76.2
N
Si
VGF
-100
600-650
P/E
PRIME
76.2
P
Zn
VGF
-100
600-650
P/E
PRIME
76.2
Undoped
CZ
-100
>30
300-350
P/P
EPI
76.2
Undoped
CZ
-100
>30
350-400
P/E
EPI
76.2
N
Sb
CZ
(100)-6
.01-.04
100-200
P/E
TEST
76.2
N
Sb
CZ
-100
.005-.02
300-350
P/P
EPI
76.2
N
Sb
CZ
-100
.005-.02
350-400
P/E
EPI
76.2
P
Ga
CZ
-100
.01-.04
300-350
P/P
EPI
76.2
P
Ga
CZ
-100
.01-.04
350-400
P/E
EPI
76.2
N
Si
VGF
-100
600-650
P/E
PRIME
76.2
P
Zn
VGF
-100
600-650
P/E
PRIME
76.2
Si
Fe
VGF
-100
5000000
600-650
P/E
PRIME
76.2
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
76.2
Shipping Cassette
ePak
Holds25Wafers
Clean Room
In addition, we can offer substrate used as Alpha Spectrometer Consumables:
Silicon substrate (PAM210610 – SI)
Main technical characteristics:
Material: silicon (can be replaced with quartz).
Diameter – (74.0 ± 0.5) mm.
Thickness – (0.5 ± 0.05) mm.
Grinding [...]
2019-03-04meta-author
The hetero epitaxial materials used to make quantum cascade laser (QCL) are mainly InP based GaInAs/AlInAs material system, GaAs based GaAs/AlGaAs material system and antimonide material system. PAM-XIAMEN can provide InP based quantum cascade lasers thin film, as follows:
1. InGaAs/InAlAs/InP for Quantum Cascade Laser Diode
PAM210906 [...]
2023-07-21meta-author
Dependence of arsenic antisite defect concentration and two dimensional growth mode on LT GaAs growth conditions
We investigated the dependence of Arsenic antisite defect concentration and that of epitaxial thickness (tepi), above which a transition to three dimensional growth appears, on the growth conditions of [...]
Annealed silicon wafer can be provided with low defect density from PAM-XIAMEN. The purpose of using annealed wafer is to eliminate defects on the silicon wafer surface and the component manufacturing area of the surface layer, and has a strong ability to capture heavy [...]
2019-02-26meta-author
AlGaInP LED Chip Sepcification
· Orange LED Wafer Substrate:
P+GaAs
p-GaP
p-AlGaInP
MQW
n-AlGaInP
DBR n-ALGaAs/AlAs
Buffer
GaAs substrate
·Chip Sepcification (Base on 7mil*7mil chips)
Parameter
Chip Size
7mil(±1mil)*7mil(±1mil)
Thickness
7mil(±1mil)
P Electrode
U/L
N Electrode
AU
Structure
Such as right-shown
·Optical-elctric characters
Parameter
Condition
Min.
Typ
Max.
Unit
Forward voltage
If=10μA
1.35
┄
┄
V
Reverse voltage
If=20mA
┄
┄
2.2
V
Reverse current
V=10V
┄
┄
2
μm
Wavelength
If=20mA
565
┄
575
nm
Half wave width
If=20mA
┄
10
┄
nm
·Light intensity characters
Brightness code
LA
LB
LC
LD
LE
LF
LG
LH
IV(mcd)
10-15
15-20
20-25
25-30
30-35
35-40
40-50
50-60
Source:PAM-XIAMEN
If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email [...]
PAM XIAMEN offers Single crystal TiO2 (Rutile) with Nb doped.
Rutile ( TiO2) single crystal is one of the most suitable materials for spectral prisms and polarizing devices such as optical isolators and beam displacers because it has a large birefringence with a high [...]
2019-05-20meta-author