PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
N
Phos
CZ
-100
1-20
4900-5100
P/E
PRIME
50.8
N
Phos
CZ
-100
1-50
5900-6100
P/E
PRIME
50.8
N
Phos
CZ
-100
9900-10100
P/E
PRIME
50.8
N
Phos
FZ
-111
2k-5k
2000-5000
P/E
PRIME
50.8
N
Phos
CZ
-111
225-275
P/P
PRIME
50.8
N
Phos
CZ
-111
250-300
P/E
PRIME
50.8
N
Phos
FZ
-111
2000-5000
275-325
P/E
PRIME
50.8
N
Phos
CZ
-111
2900-3100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
5900-6100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
5950-6050
P/E
PRIME
50.8
N
Phos
FZ
-111
150-200
9900-10100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
11900-12100
P/E
PRIME
50.8
N
Phos
CZ
-110
225-275
P/P
PRIME
50.8
N
Phos
CZ
-110
250-300
P/E
PRIME
50.8
P
Boron
CZ
(111) Off 4″ Towards (110)
.005-.02
275-325
P/E
PRIME
50.8
P
Boron
CZ
(111) Off 4″ Towards (110)
.001-.005
300-350
P/E
PRIME
50.8
P
Any
CZ
Any
Any
2400-2600
P/E
TEST
50.8
P
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
P
Boron
CZ
-100
1-20
10-30
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]
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PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm.
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>30000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
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