We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC
Published by:
Subing Yang;Sakiko Tokunaga;Minako Kondo;Yuki Nakagawa;Tamaki Shibayama;
a Graduate School of [...]
2019-12-02meta-author
PAM XIAMEN offers GaP Substrates (111) .
GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp
GaP Wafer, Undoped (111) 10x10x0.5 mm, 2sp
GaP Wafer, S doped (111) 2″x0.5 mm, 2sp
GaP wafer, S doped, (111) orientation, 2″ dia x 0.5mm, 1sp
GaP Wafer, undoped (111) [...]
2019-04-22meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrates (110)
BaTiO3 (110) 5x5x0.5 mm, 1SP, Substrate grade(with domains)
BaTiO3 (110) 5x5x1.0 mm, 2SP, Substrate grade(with domains)
BaTiO3 (110) 10 x 10 x0.5 mm, 1SP, Substrate grade (with domains)
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-04-17meta-author
Annealed silicon wafer can be provided with low defect density from PAM-XIAMEN. The purpose of using annealed wafer is to eliminate defects on the silicon wafer surface and the component manufacturing area of the surface layer, and has a strong ability to capture heavy [...]
2019-02-26meta-author
PAM XIAMEN offers 4″ Prime EPI Wafer.
Substrate:
1. Growth Method CZ
2. Diameter100+/-0.5mm
3. Type-Dopant, P- Boron
4. Resistivity 0.002 – 0.003 ohm-cm
5. Resistivity Radial Variation<10 %
6. Crystal Orientation<111> 4+/- 0.5degree
7. Primary Flat: Orientation Semi degree, Length Semi mm
8. [...]
2019-07-03meta-author
PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
6″
675
P/E
1-100
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
800
E/E
1-50
SEMI, 1Flat (57.5mm), TTV<5μm
p-type Si:B
[100]
6″
320
P/E
0.001-0.030
JEIDA Prime
p-type Si:B
[100]
6″
675
P/P
0.001-0.005
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
675
P/E
0.001-0.005
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[111-4.0°] ±0.5°
6″
625
P/E
4-15 {7.1-8.8}
SEMI Prime, 1 JEIDA Flat(47.5mm)
p-type Si:B
[111] ±0.5°
6″
675
E/E
0.010-0.025
SEMI, 1Flat (57.5mm)
n-type Si:P
[100]
6″
925 ±15
E/E
5-35 {12.5-29.7}
JEIDA Prime, TTV<5μm
n-type Si:P
[100]
6″
675
P/E
2.7-4.0
SEMI Prime
n-type Si:P
[100]
6″
250 ±5
P/P
1-3
SEMI [...]
2019-03-04meta-author