ITO/ZnO coated Sodalime Glass

PAM XIAMEN offers ITO/ZnO coated Sodalime Glass.

ITO/ZnO Coated Glass Substrate 1″ x 1″ x 0.7 mm, ITO Film=100nm, ZnO film=50nm

ITO/ZnO Coated Sodalime Glass ITO film=100nm,ZnO film=50nm

Dimension: 1″ x 1″ x 0.7 mm
Resistivity: N/A
ITO film=100nm,ZnO film=50nm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-04-28

Related Posts

8 inch Indium Aluminium Nitride (InAlN) High Electron Mobility Transistor (HEMT) on Silicon

PAM-XIAMEN can offer InAlN HEMT( Indium Aluminium Nitride High Electron Mobility Transistor) structure on 8-inch silicon. InAlN band gap is a direct band gap, and InAlN HEMT is used in producing electronic and photonic devices. It is one of the III-V group of semiconductors. As an alloy of indium nitride [...]

2021-04-16meta-author

Ceramic Substrate-10

PAM XIAMEN offers Glass Substrates(BK7 Glass and Corning Glass). BK7 Glass BK 7 (Schott) glass substrates 76.2mm x 25.4 mm x 0.5 mm, Double sides optical polished BK7 (Schott) glass substrates 10 x10 x 0.5 mm, Double sides polished ( 60/40) BK7 (Schott) glass [...]

2019-04-18meta-author

2″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

PAM XIAMEN offers 2″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm 2inch diameter wafer made of monocrystalline silicon with isolation oxide Diameter 50.8mm Polishing: one-sided for microelectronics Type of conductivity and alloying: not specified Surface orientation: not specified Primary and secondary flat orientation: not specified Thickness: 675 microns±20 microns Wedge (TTV): less than 15 microns TTV<15μm Distortion: less than 35 microns (the value is unchanged) Thickness of the isolation oxide: at least 20 nm Front side: polished Back side: lapped-etched For more information, send us email at [email protected] and [email protected]

2021-03-17meta-author

Surface Roughness-GaN material-TEST REPORT

A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing [...]

2018-08-14meta-author

Electrical properties of n-GaAs epilayers, FET and HEMT structures grown on LT-GaAs by MBE

Electrical properties of n-GaAs epilayers, FET and HEMT structures grown on LT-GaAs by MBE We have investigated the dependence of the conductive layer width and Hall mobility in n-GaAs/LT-GaAs structures on the conditions of low temperature (LT) buffer growth and on annealing parameters. Both the [...]

2013-12-18meta-author Hall mobility, Low temperature, Molecular beam epitaxy

Germanium (Ge) Ingot

Monocrystalline Germanium (Ge) ingot is provided with P type by PAM-XIAMEN. Germanium crystal does not contain large-angle grain boundaries or twin crystals. It has a diamond-shaped crystal structure and is an important semiconductor material. According different applications, single crystal germanium ingot can be divided [...]

2021-10-08meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.