This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with a mirror-like surface and good [...]
The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by C-V measurements and the thicknesses [...]
Multilayer structures of cobalt and silicon have been deposited as an ohmic contact on n-type 4H-SiC substrates in order to obtain lower contact resistance and higher thermal stability. The metal structures were prepared by using electron beam evaporation on top of the silicon face of the 4H-SiC substrates, and [...]
We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer [...]
PAM XIAMEN offers Ti: Sapphire Crystal Ti: Sapphire Crystal Ti Sapphire Crystal Introduction Titanium sapphire (titanium-doped sapphire, Al2O3 Ti3+) has a wide emission band from 660 to 1050 nm. This contributes to a variety of existing and potential applications. Examples include tunable continuous wave lasers, mode-locked oscillators, chirped pulse amplifiers, thin-plate oscillators/amplifiers, and laser detectors and [...]
The edges and notches of silicon wafers are usually machined by diamond grinding, and the grinding-induced subsurface damage causes wafer breakage and particle contamination problems. However, the edge and notch surfaces have large curvature and sharp corners, thus it is difficult to be finished by chemo-mechanical polishing. In this [...]
Experimental conditions were investigated for growth of inclusion-free near-stoichiometric CdZnTe single crystals with a minimized concentration of native point defects. The positions of the stoichiometric line PS = 8×105exp (-1.76×104/T) (atm) and the room-temperature and high-temperature p-n lines were evaluated from high-temperature in situ galvanomagnetic measurements. The Cd pressure [...]
We report new and exciting experimental results on ion-induced nanopatterning of a-Si and a-Ge surfaces. The crystalline Si (100) and Ge (100) wafers were amorphized and an a/c interface was developed by pre-irradiation with a 50 keV Ar+ beam at normal incidence with an ion fluence of 5.0 × [...]
PAM XIAMEN offers 6″FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 6″ {150.0±0.5mm}Ø×1,000±25µm, FZ p-type Si:B[111]±0.5°, Ro > 5,000 Ohmcm, One-side-polished, Particles: <10@≥0.3µm, back-side etched, One SEMI Flat (57.5mm), Edges: rounded, Sealed in Empak or equivalent cassette, BOW<30µm, MCCLifetime>1000µs. For more information, please visit our website: https://www.powerwaywafer.com, [...]
PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer. 4″ Si epi wafer Growth Method: CZ 100 +/- 0.5 mm diameter silicon Orientation <111> 4deg off P Type Boron doped 0.002 – 0.003 ohm cm Front side polished – Epi ready thickness 525 +/-25 um Back side etched Above substrates [...]
