シリコン上の8インチのインジウムアルミニウム窒化物(InAlN)高電子移動度トランジスタ(HEMT)
PAM-XIAMEN can offer Indium Aluminium Nitride(InAlN) High Electron Mobility Transistor (HEMT) structure on 8-inch silicon. Indium aluminum nitride (InAlN), a direct band gap semiconductor material, is used in producing electronic and photonic devices. It is one of the III-V group of semiconductors. As an alloy of indium nitride and aluminum [...]