ニュース

シリコン上の8インチのインジウムアルミニウム窒化物(InAlN)高電子移動度トランジスタ(HEMT)

PAM-XIAMEN can offer Indium Aluminium Nitride(InAlN) High Electron Mobility Transistor (HEMT) structure on 8-inch silicon. Indium aluminum nitride (InAlN), a direct band gap semiconductor material, is used in producing electronic and photonic devices. It is one of the  III-V group of semiconductors. As an alloy of indium nitride and aluminum [...]

2インチP型GaAs基板

PAM-XIAMEN can offer 2 inches P-type GaAs substrate. Gallium arsenide (GaAs) is a III-V type direct band gap semiconductor with a zinc blend crystal structure. GaAs is commonly used as a substrate for epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide, etc.The parameters are [...]

InGaAsAPDウェーハ

PAM-XIAMEN offers InGaAs APD wafers with high performance. InGaAs avalanche photo diodes(InGaAs APDs) are highly regarded for its low noise, higher bandwidth, and spectral response extended to 1700 nm. It is available for 1550nm wavelength after optimizing and very suitable for use in eye-safe laser ranging systems. The specifications and [...]

片面研磨された4インチテストグレードシリコンウェーハ

PAM-XIAMEN can offer 4 inch silicon wafers with single side polished at test grade. The parameters for 4″-SSP wafers are as follows: 1. Parameters of Si Single Crystal Wafer at Test Grade PAM-210310-Si wafer Sl No Item Specifications 1 Growing Method CZ 2 Wafer Diameter 100±0.5 mm 3 Wafer Thickness 525±25 μm 4 Wafer Surface Orientation <100>±0.5º 5 Type P type 6 Dopant Boron 7 Dislocation Density Less than 5000/cm2 8 Resistivity 2-8 Ohm-cm 9 Radial Resistivity Variation(max.) N/A 10 Flatness 10a BOW(max.) 50 μm 10b TIR N/A 10c TTV 10 μm 10d WARP N/A 11 Primary Flat 11a Length 32.5±2.5 mm 11b Orientation (110)±0.2º as [...]

無線周波数デバイスにおけるSiCアプリケーション

The application fields of silicon carbide substrates are mainly divided into the electronic power field, the radio frequency field, the photoelectric field, and other fields. Among them, the electronic power field and the radio frequency field are the most important applications, and the advantages of using SiC materials are obvious. The article [...]

電子パワーデバイスにおける炭化ケイ素の応用

There are many electronic power devices made of silicon carbide, and the most popular one is the inverter for electric vehicles. What is an inverter? The inverter is an device, which changes the direct current into the alternating current. 1. An Indispensable Inverter for Electric Vehicles Electric cars are powered by [...]

How Does Step Growth Reduce Silicon Carbide Defects?

When talking about the topic that step growth reduces silicon carbide defects, it is necessary to discuss the process for the growth of silicon carbide single crystals. Gas-solid phase transitions are involved in the growth process of silicon carbide single crystals by PVT or HTCVD method. Therefore, there are 3 modes in [...]

How to Determine the SiC Polar?

The commonly used 4H-SiC and 6H-SiC space groups are both P63mc, and the point group is 6mm. 6mm belongs to one of 10 polar point groups (1, 2, 3, 4, 6; m, 3m; mm2, 4mm, 6mm), so 4H-SiC and 6H-SiC are polar crystals. The polar crystal refers that at [...]

P-type Silicon Carbide Substrate and IGBT Devices

P-type silicon carbide substrate is generally used to make power devices, such as insulated gate bipolar transistors (IGBT, Insulate-Gate Bipolar Transistor). IGBT= MOSFET+BJT, it is a non-on or off switch. MOSFET=IGFET (Metal Oxide Semiconductor Field Effect Transistor, or Insulated Gate Field Effect Transistor). BJT (Bipolar Junction Transistor, bipolar junction transistor, [...]

Growth of Silicon Carbide Crystals by Vapor Phase Method

The silicon carbide crystal most commonly used as a semiconductor material is 4H-SiC wafer. However, silicon carbide crystals have multiple types. Once the conditions are not well controlled in the process of the growth of silicon carbide crystals, the resulting structure may be 3C, 6H, 15R, etc., but not [...]