化合物半導体

PAM-XIAMEN offers Compound Semiconductor Wafer Material including SiC wafer and III-V group wafer: InSb wafer, InP wafer, InAs wafer, GaSb wafer, GaP wafer,GaN wafer,AlN wafer and GaAs wafer.
III-V compounds material include BN, BP, BAs, BSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InAs, InN, InP and InSb. Among them, BN, AlN, GaN and InN are Wurtzite structures, and the other 12 are zinc blende structures. Because pentavalent atoms have higher electronegativity than trivalent atoms, there are a few ionic bond components. Because of this, when the III-V materials are placed in the electric field, the lattice is easy to be polarized, and the ion displacement is helpful to increase the dielectric coefficient, if the electric field frequency is in the infrared range. Among the n-type semiconductors of GaAs materials, the electron mobility (mn-8500) is much higher than that of Si (mn-1450), so the movement speed is fast, and its application in high-speed digital integrated circuits is superior to that of Si semiconductors.

  • InP waferInP wafer

    InP基板

    PAM-XIAMEN offers VGF InP(Indium Phosphide) wafer with prime or test grade including undoped, N type or semi-insulating. The mobility of InP wafer is different in different type, undoped one>=3000cm2/V.s, N type>1000 or 2000cm2V.s(depends on different doping concentration), P type: 60+/-10 or 80+/-10cm2/V.s(depends on different Zn doping concentration), and semi-insulting one>2000cm2/V.s, the EPD of Indium Phosphide is below 500/cm2 normally.

  • InAs waferInAs wafer

    InAsのウェハ

    PAM-XIAMENは、LEC(Liquid Encapsulated Czochralski)によって成長させたn型、p型、または半絶縁性が異なる配向(111)または(100)のエピグレードの化合物半導体InAsウェーハを提供します。

  • InSb waferInSb wafer

    InSbのウェハ

    PAM-XIAMEN offers Compound Semiconductor InSb wafer – Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

  • GaSb WaferGaSb Wafer

    GaSbのウェハー

    PAM-XIAMEN offers Compound Semiconductor GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100)

  • GaP WaferGaSb Wafer

    GaPのウェーハ

    PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).