5-2-1-2 Electrical Properties
Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype
exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor
electrical properties of the 3C, 4H, and 6H SiC polytypes are given in [...]
2018-06-28メタ著者
5-5-6 SiC Device Packaging and System Considerations
Hostile-environment SiC semiconductor devices and ICs are of little advantage if they cannot be reliably packaged and connected to form a complete system capable of hostile-environment operation. With proper material selection, modifications of existing IC packaging technologies appear [...]
2018-06-28メタ著者
3-10. Carrots
Similar to comet tails in appearance except they are more angular and lack a discrete head. If present, these features are aligned parallel to the major at. Usually,any carrots present tend to be of the same length. Count once per occurrence. Two [...]
2018-06-28メタ著者
5-1 Introduction
Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed
for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors
cannot adequately perform. Silicon carbide’s ability to function under such extreme conditions
is expected to enable significant improvements to a far-ranging variety [...]
2018-06-28メタ著者
2-20.Linear Crystallographic Defects
Crystalline solids exhibit a periodic crystal structure. The positions of atoms or molecules occur on repeating fixed distances, determined by the unit cell parameters. However, the arrangement of atom or molecules in most crystalline materials is not perfect. The regular patterns are [...]
2018-06-28メタ著者
5-3-1高温デバイスの動作SiCのワイドバンドギャップエネルギーと低い固有キャリア濃度により、SiCはシリコンよりもはるかに高い温度で半導体の動作を維持できます。これにより、シリコンよりもはるかに高い温度でSiC半導体デバイスの機能が可能になります。 基本的な半導体電子で議論されているように[...]
2018-06-28メタ著者