2-16.Pits
Individual distinguishable surface anomalies, which appears as a depression in the wafer surface with a lengthto-width ratio less than 5 to 1, and visible under high intensity illumination.
2018-06-28meta-author
5-5 SiC Device Fundamentals
To minimize the development and production costs of SiC electronics, it is important that SiC device fabrication takes advantage of existing silicon and GaAs wafer processing infrastructure as much as possible. As will be discussed in this section, most of the [...]
2018-06-28meta-author
2-8.Secondary Flat Orientation
A at of shorter length than the primary orientation at,whose position with respect to the primary orientation at identies the face of the wafer.
2018-06-28meta-author
2-31.N type
A semiconductor has electrical conductivity between that of a conductor and an insulator. Semiconductors differ from metals in their characteristic property of decreasing electrical resistivity with increasing temperature.Semiconductors can also display properties of passing current more easily in one direction than the other, [...]
2018-06-28meta-author
2-11.Edge Chips
Any edge anomalies (including wafer saw exit marks) in excess of 1.0 mm in either radial depth or width. As viewed under diffuse illumination, edge chips are determined as unintentionally missing material from the edge of the wafer.
2018-06-28meta-author
5-6 SiC Electronic Devices and Circuits
This section briefly summarizes a variety of SiC electronic device designs broken down by major application areas. SiC process and material technology issues limiting the capabilities of various SiC device topologies are highlighted as key issues to be addressed [...]
2018-06-28meta-author