2-9.(Area) Wafer Contamination
Any foreign matter on the surface in localized areas which is revealed under high intensity (or diffuse) illumination as discolored, mottled, or cloudy appearance resulting from smudges, stains or water spots.
2018-06-28meta-author
5-4-4-1 SiC Epitaxial Growth Processes
An interesting variety of SiC epitaxial growth methodologies, ranging from liquid-phase epitaxy, molecular beam epitaxy, and chemical vapor deposition(CVD) have been investigated . The CVD growth technique is generally accepted as the most promising method for attaining epilayer reproducibility, quality, [...]
2018-06-28meta-author
3-6. Edge Chips
Areas where material has been unintentionally removed from the wafer.Do not confuse fractures in epi crown with edge chips.
2018-06-28meta-author
2-28.WARP
Warp is the difference between the maximum and the minimum distances of the median surface of a free, un-clamped wafer from the reference plane defined above. This definition follows ASTM F657, and ASTM F1390,which deviation from a plane of a slice or wafer centerline [...]
2018-06-28meta-author
3-3. Dimpling
A texture resembling the surface of a golf ball. Speci ed in % affected area.
2018-06-28meta-author
1-5.Thermal Expansion Coefficient
Thermal expansion is the tendency of matter to change in volume in response to a change in temperature.
When a substance is heated, its particles begin moving more and thus usually maintain a greater average separation. Materials which contract with increasing temperature are [...]
2018-06-28meta-author