2-9.(Area) Wafer Contamination
Any foreign matter on the surface in localized areas which is revealed under high intensity (or diffuse) illumination as discolored, mottled, or cloudy appearance resulting from smudges, stains or water spots.
2-9.(Area) Wafer Contamination
Any foreign matter on the surface in localized areas which is revealed under high intensity (or diffuse) illumination as discolored, mottled, or cloudy appearance resulting from smudges, stains or water spots.
5-7-1 Future Tied to Material Issues The previous sections of this chapter have already highlighted major known technical obstacles and immaturities that are largely responsible for hindered SiC device capability. In the most general terms, these obstacles boil down to a handful of key fundamental [...]
5-3-1 High-Temperature Device Operation The wide bandgap energy and low intrinsic carrier concentration of SiC allow SiC to maintain semiconductor behavior at much higher temperatures than silicon, which in turn permits SiC semiconductor device functionality at much higher temperatures than silicon . As discussed in basic semiconductor electronic [...]
5-6-1 SiC Optoelectronic Devices The wide bandgap of SiC is useful for realizing short-wavelength blue and ultraviolet (UV) optoelectronics. 6H-SiC-based pn junction light-emitting diodes (LEDs) were the first semiconductor devices to cover the blue portion of the visible color spectrum, and became the first SiC-based devices to [...]
Most analog signal conditioning and digital logic circuits are considered “signal level” in that individual transistors in these circuits do not typically require any more than a few milliamperes of current and <20 V to function properly. Commercially available silicon-on-insulator circuits can perform complex digital and [...]
2-19.Scratches A scratch is dened as a singular cut or groove into the frontside wafer surface with a length-to-width ratio of greater than 5 to 1, and visible under hight intensity illumination.
2-25.FWHM Full width at half maximum (FWHM) is an expression of the extent of a function, given by the difference between the two extreme values of the independent variable at which the dependent variable is equal to half of its maximum value.
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