Worldwide semiconductor market is expected to be slightly positive in 2016 and grow moderately in 2017. WSTS has re-calculated the Autumn 2015 forecast using the actual figures of the fourth quarter 2015. During 2016 growth is expected to be driven by sensors, micros, and [...]
2016-03-23meta-author
Wide Bandgap Technology –Next Generation Power Devices
The tightening of industry standards and changes in government regulations are key drivers of higher energy efficiency. For example, data centers are growing exponentially to meet demand. They use about 3% of the world’s total electricity supply (400 [...]
2018-08-30meta-author
AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.
AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure.
1.Specs of AlGaInP Wafers on Chips
AlGaInP LED Wafer [...]
GaAs is a typical III-V direct bandgap semiconductor material with excellent optoelectronic properties and high mobility, making it suitable for the production of high-speed RF devices. GaAs can also form quantum well structures with GaAlAs, further improving the performance of light-emitting devices (low threshold [...]
2023-03-24meta-author
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 500±25um.
6″ Si wafer
DSP
N-type
<111>
thickness 500±25um
resistivity40-100Ωcm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-07-01meta-author
PAM XIAMEN offers GaN on Sapphire for RF.
1. GaN HEMT Structure on Sapphire for RF Application
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
/
XRD(102)FWHM
/
XRD(002)FWHM
/
Sheet Resistivity
/
AFM RMS (nm)of 5x5um2
<0.25nm
Bow(um)
<=35um
Edge exclusion
<2mm
SiN passivation layer
0~30nm
u-GaN cap layer
/
Al composition
20-30%
In composition
17% for InAlN
AlGaN barrier layer
20~30nm
AlN spacer
/
GaN [...]
2019-05-17meta-author