PAM-XIAMEN offers (20-21) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-21)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
> 106 Ω.cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
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PAM XIAMEN offers 4″ Si wafer Thickness:500±20μm.
4″ Si wafer
4″ Si, N-type, <100>, SSP
resistivity3000-4000Ωcm
thickness500±20μm
carrier lifetime>1ms(1000μm)
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) [...]
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Sapphire Substrate Market in 2013
Will cell phone windows come to the rescue?
Significant overcapacity and low LED substrate prices will affect the profitability and viability of many sapphire players in 2013 and beyond, but emerging applications could transform the industry.
The sapphire material shortage experienced from [...]
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Layer structure of 703nm Laser
We can offer Layer structure of 703nm Laser as follows:
Layer
Composition
Thickness (um)
Doping(cm-3)
Cap
P+- GaAs
0.2
Zn:>1e19
Cladding
p – Al0.8Ga0.2As
1
Zn:1e18
Etch stop
GaInP
0.008
Zn:1e18
Top barrier
Al0.45Ga0.55As
0.09
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Barrier
Al0.45Ga0.55As
0.01
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Barrier
Al0.45Ga0.55As
0.01
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Bottom barrier
Al0.45Ga0.55As
0.09
Undoped
Cladding
n – Al0.8Ga0.2As
1.4
Si:1e18
Buffer
n – GaAs
0.5
Si:1e18
Substrate
n+ – GaAs
S :>1e18
Source:PAM-XIAMEN
For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.
PAM XIAMEN offers 4″ silicon ignot.
Silicon ingot, per SEMI,
G 100.7±0.3mmØ,
p-type Si:B[100]±2.0°,
Ro=(0.001-0.003)Ohmcm,
Ground Ingot, NO Flats,
NOTE: visual rings of dopant on front and back side ARE NOT allowed
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
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