PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
6″
350
P/P
FZ 2,700-3,250
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
900
C/C
FZ >50
SEMI Prime, 1Flat, MCC Lifetime>6,000μs
n-type Si:P
[100]
6″
825
C/C
FZ 7,000-8,000 {7,025-7,856}
SEMI, 1Flat, Lifetime=7,562μs
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
P/P
FZ >3,500
SEMI Prime, 1Flat (57.5mm)
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
790 ±10
C/C
FZ >3,500
SEMI, 1Flat
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
P/P
FZ >1,000
SEMI Prime, Notch on <010> {not on <011>}, Laser Mark
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
BROKEN
FZ >1,000
SEMI notch Test, Broken into many large pieces. One piece [...]
2019-03-04meta-author
A novel method for estimating threshold voltage shifts of n-channel SiC MOSFETs under negative gate bias stresses has been proposed. In the proposed method, n-type SiC MOS capacitors were utilized instead of n-channel SiC MOSFETs. The n-type SiC MOS capacitors were exposed to ultraviolet [...]
2019-10-21meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
SSP
Boron
P+
100
57,5 ± 2,5
100 ± 1
0.0 ± 5.0 °
0.001 – 100 Ohmcm
150 ± 0.5 mm
675 ± 200 µm
100
20
100
6
SSP
Boron
P
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.5 °
> [...]
2019-02-25meta-author
PAM XIAMEN offers Yb YAG Ytterbium (Yb) doped Yttrium Aluminium Garnet Laser Crystal.
Ytterbium – Yb:YAG is a very promising laser crystal and is more suitable for diode-pumping than the commonly used Nd-doped YAG crystals. Compared with the traditional Nd:YAG crystal, Yb:YAG crystal has a much wider [...]
2019-03-15meta-author
PAM XIAMEN offers Gallium Nitride (GaN) Template grown on Sapphire. C plane (0001) GaN on flat Sapphire and GaN on PSS are available, and these GaN templates includes N-type, P-type or semi-insulating (SI):
1. Wafer List:
2 inch N type/Si doped 5um Gallium Nitride GaN Template on Sapphire, single [...]
2019-03-11meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
75 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
136 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
20
n- Si:P
300±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
21
n- Si:P
400±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
22.5
n- Si:P
12.5±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
25
n- Si:P
0.08 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
25
n- Si:P
0.04 ±10%
N/N+
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
37.5
n- Si:P
270 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
37.5
n- Si:P
85±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
58
n- Si:P
60±10%
N/N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
15
n- Si:P
8±10%
N/N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
5
n- Si:P
3±10%
N/N/N/N+
4″Øx460μm
n- Si:Sb[111]
0.007-0.020
P/E
60
n- Si:P
40.5±4.5
N/N/N+
4″Øx460μm
n- Si:Sb[111]
0.007-0.020
P/E
20
n- Si:P
10±2
N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
60
n- Si:P
58.75 ±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
60
n- [...]
2019-03-08meta-author