3「シリコンウエハー20

3「シリコンウエハー20

PAM厦門の申し出3 "シリコンウエハー20

Siウエハ
Orientation: (111) ± 0.5°
Type: n-type
Dopant: P
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 2° to <11-2>
Resistivity: < 0.003 Ohm*cm
Single side polished
C Phos > E19 atom/cm3
Oi < 1E18 atom/cm3
Cs < 4E16 atom/cm3

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