GaN-On-Si Key Patent Analysis
The size of sapphire substrates is increasing to response to the current trend toward the low LED price, but it is actually hard to grow sapphire single crystals to a large size. For this reason, research on adopting silicon that has [...]
2012-12-19meta-author
GaAs-based AlGaInP red LED epi-wafer is a common visible light LED material that has been widely developed in recent years. AlGaInP quaternary red LED has many advantages such as strong current bearing capacity, high luminous efficiency and high temperature resistance. It has an irreplaceable [...]
2022-10-09meta-author
PAM-XIAMEN offers crucibles and coating products of PBN material including PBN Crucibles,PBN Plates,PBN Coating,PBN Heaters.
These PBN (Pyrolytic Boron Nitride) products are widely used in such fields as optoelectronic,microelectronics,solar energy and powder sintering.
[...]
2018-11-01meta-author
PAM XIAMEN offers 125mm Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
125
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
125
N
Phos
CZ
-100
1-20
550-600
P/E/OX
PRIME
125
N
Phos
CZ
-100
1-20
575-625
P/E/WTOx
125
N
Phos
CZ
-100
1-50
575-625
P/E/DTOx
PRIME
125
N
Phos
CZ
-100
1-50
575-625
P/E/Ni
PRIME
125
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
125
P
Boron
CZ
-100
1-50
550-650
P/E
PRIME
125
P
Boron
CZ
-100
1-20
575-625
P/E/WTOx
125
P
Boron
CZ
-100
1-50
575-625
P/E/DTOx
PRIME
125
P
Boron
CZ
-100
1-50
575-625
P/E/Ni
PRIME
125
P
Boron
FZ
-100
1000-5000
875-925
P/E
PRIME
125
Single Wafer Shipper
ePak
Holds1Wafer
PRIME
125
Shipping Cassette
ePak
Holds25Wafers
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal [...]
2019-03-04meta-author
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 1000±25μm.
Thickness 1000±25μm
Si, 150mm dia. SSP
N type Phos or antimony
resistivity 0.01-0.2 ohm-cm
with 200A thermal OX and
1200A LPCVD nitride – stoichiometric
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-01meta-author
PAM XIAMEN offers Ga2O3 Beta Gallium Oxide Wafer and crystal Substrates SEMI-insulating type.
SPECIFICATIONS:
Crystal structure: Monoclinic
Lattice parameter:
a = 12.225 A
b = 3.040 A
c = 5.809 A
β = 103.7 degree
Melt point (℃): 1725
Density: 5.95(g/cm3)
Dielectric constants: 10
Band Gap: 4.8 – 4.9 eV
Conductivity: Semi-insulating
Breakdown Voltage (V/cm): 8 MV/cm
Available Size: 5 x 5 mm, 10 x 10 mm,Ф1″ (1 inch diameter). Special [...]
2019-03-12meta-author