PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application.
1. Specification of Semi-insulating GaAs Substrate
1.1 Semi-insulated GaAs Substrate PAM190425-GAAS
Parameter
Customer’sRequirements
Guaranteed/Actual Values
UOM
GrowthMethod:
VGF
VGF
—
ConductType:.
S-I-N
S-I-N
—
Dopant:
c doped
c [...]
2020-05-26meta-author
PAM-XIAMEN, one of leading silicon wafer producers, can offer 4 inch N type Sb doped Silicon wafer. As an important substrate for epitaxial growth, heavily doped antimony silicon wafers are widely used in integrated circuit manufacturing.
1. Specification of 4 inch Sb Doped Si wafer [...]
2021-06-25meta-author
PAM-XIAMEN can provide wafer polishing service for III-V compound wafers (such as InSb wafer, GaSb wafer, InAs wafer), ultra-thin semiconductor wafer, CZT wafer and other photoelectric materials. We aim to adopt a high-precision chemical polishing process to minimal surface damage. Take the InSb wafer [...]
2022-02-16meta-author
PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
2019-05-13meta-author
PAM XIAMEN offers GaAs (100) undoped crystal .
GaAs, 10×5,10×10
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10×3 x0.5 mm, 2SP
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10×5 x0.5 mm, 2SP
GaAs (100) orientation, SI (semi-insulating), undoped 5x5x 0.5mm, 1sp,
GaAs [...]
2019-04-22meta-author
Thanks to GaAs tunnel junction technology, we offer epi wafers of single-junction and dual-junction InGaP / GaAs solar cells, with different structures of epitaxial layers (AlGaAs, InGaP) grown on GaAs for solar cell application. And now we offer GaAs epi wafer with InGaP tunnel junction as [...]