PAM XIAMEN offers Aluminum Oxide Substrate Al2O3.
Aluminum Oxide Ceramic Substrates Porperties
Purity (wt%)
0.96
0.996
0.996
0.999
Density (g/cm3)
> 3.75
3.88
3.87
3.92
Thermal conductivity (W/m. K)
24
34.7
35
35
Thermal Expansion (x10-6/oC)
< 7.7
7~8.3
7~8.3
8.1
Dielectric Strength (Kv/mm)
> 14
23.64
23.64
8.7
Dielectric Constant (at 1MHZ)
9.8
9.9
9.9
9.8
Loss Tangent (x10-4 @1MHZ)
4
1
1
< 1
Volume Resistivity (ohm-m)
> 1013 at [...]
2019-04-18meta-author
PAM-XIAMEN is able to supply nitrogen (N) doped silicon wafers, specifications please refer to:
https://www.powerwaywafer.com/silicon-wafer.
The doping of nitrogen as an impurity into silicon crystals not only has a beneficial effect on the performance of silicon wafers, but also has an important impact on the physical [...]
2024-04-16meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
2″
279
P/E
FZ >1,000
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[111] ±0.5°
2″
500
P/P
FZ 5,000-6,500
SEMI Test (in unsealed cassette)
p-type Si:B
[111] ±0.5°
2″
275
P/E
FZ 3,000-5,000
SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers
p-type Si:B
[111-7° towards[110]] ±0.5°
2″
279
P/P
FZ >2,000
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI, Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI TEST (Scratched), Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI [...]
2019-03-07meta-author
With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers.
SiC usually adopts the PVT method with [...]
2021-02-25meta-author
The Schottky barrier heights of Ti/Au contacts on p-type GaAs, grown on (111)A and (100) GaAs substrates by molecular beam epitaxy, have been investigated by I-V and C-V techniques. Higher barrier heights are observed for contacts on (111)A GaAs films. Comparison between our results [...]
2019-10-21meta-author
Top 10 Publication in in Microelectronics & Electronic Packaging by Citation
Post: PAM-XIAMEN, date: Jan 13,2020
PAM-XIAMEN has compiled top 10 the ranking data and the publication name in Microelectronics & Electronic Packaging by citation in impact factor(h5-index and h5 median, according to google scholar)
PAM-XIAMEN is [...]
2020-01-13meta-author