4Hは、SiC半絶縁します

4Hは、SiC半絶縁します

PAM-XIAMEN offers 4H semi-insulating SiC wafer with vanadium doped or undoped high-purity, semi-insulating, size from 2” to 6”. The transmission rate of 4H semi-insulating silicon carbide with thickness of 353 um, double sides polished is shown as the figure: 

Transmission Rate of 4H Semi-insulating SiC Wafer

Transmission Rate of 4H Semi-insulating SiC Wafer

We also can offer transparent data of SiC substrate, for details please contact at victorchan@powerwaywafer.com.

1. The Price:

PAM-厦門は、高品質SiCウエハとSiC結晶基板の市場で最高の価格を提供しています。 弊社価格マッチングポリシーは、同等の仕様を持つSiC結晶製品の最高価格を得ることを保証します。

2. Custom:

SiC crystal products can be customized to meet the special requirements and specifications of customers. For instance, we provide cutting service to 10mm x 10mm slices, see below example please:

4H semiinsulating SiC, 5mm*5mm, 10mm*10mm with 330μm thickness;

4H semi insulating SiC, 15mm*15mm, 20mm*20mm 330μm thickness;

4H SiC substrate on axis C(0001), 180um+/-25um thickness.

3. Specification of 4H Semi Insulating SiC Substrate:

No.1: 2” 4H Semi-insulating SiC Wafer, C Grade
4H-SI 2″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
C Grade,MPD<50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP, Surface Roughness : <0.5 nm

No.2: 2” 4H Semi-insulating SiC Wafer, B Grade
4H-SI 2″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
B Grade,MPD<15 cm-2
B Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP, Surface Roughness : <0.5 nm

No.3: 3” 4H Semi-insulating SiC Wafer, C Grade
4H-SI 3″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
C Grade,MPD<50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP, Surface Roughness : <0.5 nm

No.4: 3” 4H Semi-insulating SiC Wafer, B Grade
4H-SI 3″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
C Grade,MPD<15 cm-2
C Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP, Surface Roughness : <0.5 nm

No.5: 4” 4H Semi-insulating SiC Wafer, C Grade
4H-SI 4″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 or 500 ± 25 um
C Grade,MPD<50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP, Surface Roughness : <0.5 nm

No.6: 4” 4H Semi-insulating SiC Wafer, B Grade
4H-SI 4″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 350 or 500 ± 25 um
C Grade,MPD<15 cm-2
C Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP, Surface Roughness : <0.5 nm

No.7: 6” 4H Semi-insulating SiC Wafer, C Grade
4H-SI 6″ dia,
Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 500 ± 25 um
C Grade,MPD<50 cm-2
C Grade,RT:≥1E5 Ω•cm
Double face polished/Si face epi-ready with CMP, Surface Roughness : <0.5 nm

No.8: 6” 4H Semi-insulating SiC Wafer, B Grade
4H-SI 6″ dia,
Type/ Dopant : Semi-insulating / V or undoped
Orientation : <0001>+/-0.5 degree
Thickness : 500 ± 25 um
C Grade,MPD<15 cm-2
C Grade,RT:≥1E7 Ω•cm
Double face polished/Si face epi-ready with CMP, Surface Roughness : <0.5 nm

4. Application of 4H Semi-insulating SiC Crystal Substrate and Wafer

Silicon carbide (SiC) crytsals have unique physical and electronic properties. SiC-based devices have been used for short-wavelength photoelectricity, high-temperature, anti-radiation applications. High power and high frequency electronic devices made from semi-insulating silicon carbide substrates are superior to those based on Si and GaAs, and 4H semi-insulating SiC wafers are mainly used in Power device and RF device. Moreover, it can be used as carriers for temporary bonding. For transparent semi-insulated SiC substrate, it has a transparent rate around 70% and is suitable for heat dissipation optics. 

5. FAQ of SiC Wafer

Q1: We would like 170 um thick semi-insulating SiC, would that be possible?

A: It’s no problem to grow 170um thick 4H-SiC semi-insulating at current technology.

Q2: Could you please tell me the difference between the N type and the semi-insulating 4H SiC wafer?

A: The difference is that the resitivity of N type SiC wafer is <1ohm.cm, while that of semi-insulating one is >1E5ohm.cm.

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詳細については、メールでお問い合わせください。victorchan@powerwaywafer.compowerwaymaterial@gmail.com.

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