PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
PAM-PA04 series detectors are high density pixel array detector based on CZT crystal. they can counting high-dose X-ray and imaging.
1. CZT High-Density Pixel Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
>10.0×10.0mm2
Thickness
>0.7mm
Pixel size
<70um
Single Pixel leakage current
<0.01nA@100V
The maximum counting rate of linear region
>100Mcps/mm2
Electrode material
Au
Operation temperature
20℃~40℃
Storage temperture
10℃~40℃
Storage humidity
20%-80%
Details
2. Features of CZT Pixel Detector [...]
2019-04-24meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
DSP
Phosphorus
N
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.25 °
1.5 ± 0.5 Ohmcm
150 ± 0.5 mm
280 ± 2.5 µm
30
1,25
30
6
DSP
Phosphorus
N
100
57,5 ± 2,5
110 ± 0,20
0.0 ± 0.5°
1-4 Ohmcm
150 [...]
2019-02-25meta-author
Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate
In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, [...]
PAM XIAMEN offers 785nm laser diode wafers grown on GaAs substrate. Specific epi structure please see below:
1. Specifications of 785nm GaAs LD Epi Wafer
No.1 AlAs / AlGaAs LD Epi on GaAs PAM200420-LD
Layer
Material
Thickness
Notes
Layer 7
AlAs
–
Layer 6
GaAs
–
Layer 5
AlAs
–
Layer 4
AlGaAs
150 nm
Emitting at 785nm
Layer 3
AlAs
–
Layer 2
AlGaAs
–
Emitting at 700 nm
Layer [...]
2019-03-13meta-author
PAM XIAMEN offers GaP Substrate (100) .
GaP (100) undoped
GaP Wafer, undoped (100) 10x10x0.5 mm, 1sp
GaP Wafer, undoped (100) 10x10x0.5 mm, 2sp
GaP wafer undoped (100) 2″ diaX 0.45mm 1sp, R: 1.5×10^14 ohm.cm, Semi-Insulating
GaP wafer undoped (100) 2″ diaX 0.45mm 1sp,R: [...]
2019-04-22meta-author