Low temperature grown (LTG) gallium arsenide (GaAs) thin-film on GaAs substrate is available for photodetctors and photomixers. In addition, we can supply gaas epi wafer, for more GaAs thin film wafer please view https://www.powerwaywafer.com/gaas-wafers/gaas-epiwafer.html. LTG-GaAs is GaAs grown at a low temperature of 250-300 [...]
2022-08-12メタ著者
Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020
Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive [...]
2012-11-09メタ著者
PAM XIAMEN offers Pyrolytic Boron Nitride.
Performance PBN’s properties, its intrinsic purity, superior mechanical strength, and thermal stability make it a superb choice for high temperature furnace and electrical components; microwave and semiconductor components; and industry standardized crucibles for Gallium Arsenide Crystal production.
Good [...]
2019-05-14メタ著者
PAM-XIAMEN can offer GaAs epiwafer (gallium arsenide epiwafer) with p-type & n-type AlGaAs multilayer for VCSEL laser application. The specifications of GaAs epiwafer are as follow:
1. Specifications of GaAs Epiwafer with AlGaAs Multilayers
VCSEL, 980nm, GaAs epiwafer, 4″size
PAM210208
Layer No.
Material
Group
Repeat
Mole Fraction(x)
Strain(ppm)
PL(nm)
Thickness(nm)
Dopant
32
GaAs
–
–
–
–
–
156
C
31
Al(x)GaAs
–
–
0.04
–
–
50.5
C
30
Al(x)GaAs
–
–
0.87->0.04
–
–
20
C
29
Al(x)GaAs
–
–
0.87
–
–
59.7
C
28
Al(x)GaAs
–
16
0.04->0.87
–
–
20
C
27
Al(x)GaAs
–
0.04
–
–
51.5
C
26
Al(x)GaAs
–
0.87->0.04
–
–
20
C
25
Al(x)GaAs
–
0.87
–
–
59.7
C
24
Al(x)GaAs
–
–
0.04->0.87
–
–
20
C
23
Al(x)GaAs
–
–
0.04
–
–
32.9
C
22
Al(x)GaAs
–
–
0.80->0.04
–
–
20
C
21
Al(x)GaAs
–
–
0.98
–
–
20
C
20
Al(x)GaAs
–
–
0.8
–
–
61.6
C
19
GaAsP
–
–
–
–
–
–
UD
18
In(x)GaAs
–
–
–
–
970nm
–
UD
17
GaAsP
–
–
–
–
–
–
UD
16
In(x)GaAs
–
–
–
–
970nm
–
UD
15
GaAsP
–
–
–
–
–
–
UD
14
In(x)GaAs
–
–
–
–
970nm
–
UD
13
GaAsP
–
–
–
–
–
–
UD
12
Al(x)GaAs
–
–
0.87
–
–
59.7
Si
11
Al(x)GaAs
–
–
0.04->0.87
–
–
20
Si
10
Al(x)GaAs
–
–
0.04
–
–
51.5
Si
9
Al(x)GaAs
–
–
0.87->0.04
–
–
20
Si
8
Al(x)GaAs
–
6
0.87
–
–
59.7
Si
7
Al(x)GaAs
–
0.04->0.87
–
–
20
Si
6
Al(x)GaAs
–
0.04
–
–
51.5
Si
5
Al(x)GaAs
–
30
0.92->0.04
–
–
20
Si
4
Al(x)GaAs
–
0.92
–
–
59.8
Si
3
Al(x)GaAs
–
0.04->0.92
–
–
20
Si
2
Al(x)GaAs
–
0.04
–
–
51.5
Si
1
GaAs
–
–
–
–
–
500
Si
4 inch GaAs substrate Si doped; [...]
2021-04-02メタ著者
Indium gallium arsenide (InGaAs) sensors are supplied by PAM-XIAMEN, a InGaAs sensor manufacturer. Its working principle is actually the principle of shortwave infrared (SWIR). And the working principle of SWIR-based sensor is similar to that of CMOS-based sensor, converting photons into electrons. SWIR technology [...]
2021-07-15メタ著者
PAM-XIAMEN provides indium arsenide (InAs) ingot with high quality and competitive price. Indium arsenide is a group III-V compound semiconductor material composed of indium and arsenic. It is a silver-gray solid at room temperature, and the indium arsenide crystal structure is a zinc blende crystal [...]
2021-06-23メタ著者
