PAM厦門は、60 + 1ミリメートルFZシリコンインゴットを提供しています-2
FZシリコンインゴット
Diameter 60+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.comとpowerwaymaterial@gmail.com
This paper describes the bonding characteristics of 3C-SiC wafers using plasma enhanced chemical vapor deposition (PECVD) oxide and hydrofluoric acid (HF) treatment for SiC-on-insulator (SiCOI) structures and high-temperature microelectromechanical system (MEMS) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film [...]
PAM XIAMEN offers thinnest Silicon Wafers. We have sold Silicon Wafers with a 2 micron thickness. But our biggest selling thin silicon wafer is: 100mm P(100) 1-10 ohm-cm 50um SSP and DSP TTV <2um Please let us know what specs you would like us to quote? For more information, [...]
PAM XIAMEN offers 12″ Dummy Grade Silicon Wafer Thickness 650-700um. 12” 300mm dummy grade wafers Surface is double side polished thickness 650-700um V Notch(SMI STD) slight scratch(with no stains or heavy/deep scratches) Dummy grade silicon wafers perform very efficiently for experimental and testing projects. These [...]
PAM XIAMEN offers Single crystal CdS window. CdS (0001) 5 mm X 5 mm x 0.5 mm , 1 Sides polished CdS (0001) 5 mm X 5 mm x 0.5 mm , 2 Sides polished CdS (0001) 5 mm x 5 mm x1.0 mm, [...]
PAM XIAMEN offers WSe2 Crystal. WSe2 (Tungsten Diselenide) is a very stable semiconductor in the group-VI transition metal dichalcogenides. WSe2 photoelectrodes are stable in both acidic and basic conditions, making them potentially useful in electrochemical solar cells. Also, the material can be changed from [...]
PAM XIAMEN offers 4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm 4inch diameter wafer made of monocrystalline silicon with isolation oxide Diameter 101.6mm Polishing: one-sided for microelectronics Type of conductivity and alloying: not specified Surface orientation: not specified Primary and secondary flat orientation: not specified Thickness: 675 microns±20 microns Wedge (TTV): less than 15 microns TTV<15μm Distortion: less than 35 microns Thickness of the isolation oxide: at least 20 nm Front side: polished. Back side: lapped-etched For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
