PAM XIAMEN offers 6″CZ Prime Silicon Wafer-2
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ). PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation. <=1″ diameter wafers [...]
PAM XIAMEN offers4″ Silicon EPI Wafer-6 4″ Si epi wafer Structure: (Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate) Top layer intrinsic Si: Resistivity≥50Ωcm, Thickness 5μm, Residual carrier concentration<1×1014/cm3 Middle layer Phosphorus Doped: Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3), Thickness 20μm, Residual carrier concentration<2.1×1013/cm3 Layer with Ion Implantation: handled [...]
PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm. FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity>30000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: https://www.powerwaywafer.com, [...]
PAM XIAMEN offers 80+1mm FZ Si Ingot-2 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Pyrolytic Graphite Substrate. Pyrolytic Graphite is a unique form of graphite manufactured by decomposition of a hydrocarbon gas at very high temperature in a vacuum furnace. It is nucleated on substrate and grown with texture along C axis . The result is an [...]
Abstract The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately [...]
Cookie | Duration | Description |
---|---|---|
cookielawinfo-checkbox-analytics | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Analytics". |
cookielawinfo-checkbox-functional | 11 months | The cookie is set by GDPR cookie consent to record the user consent for the cookies in the category "Functional". |
cookielawinfo-checkbox-necessary | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookies is used to store the user consent for the cookies in the category "Necessary". |
cookielawinfo-checkbox-others | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Other. |
cookielawinfo-checkbox-performance | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Performance". |
viewed_cookie_policy | 11 months | The cookie is set by the GDPR Cookie Consent plugin and is used to store whether or not user has consented to the use of cookies. It does not store any personal data. |