PAM-XIAMEN supplies 6 inch c-doped semi-insulating GaAs substrates, which are prime grade and mechanical grade grown by VGF. For wafer details, please view specifications listed below:
1. Prime Grade C-doped Semi-insulating GaAs
PAM220704-GaAs-Un
Parameter
GaAs-Un-6in-625um-PP
UOM
Growth method
VGF
Grade
Prime grade (Epi-ready)
Dopant
C doped
Orientation
(100) ±0.5°
Orientation Angle
N/A
°
Diameter
150.0±0.2
mm
Thickness
625±25 [...]
2022-07-04meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
2″
1000
P/E
0.001-0.005
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01 {0.00087-0.00100}
SEMI Prime
p-type Si:Ga
Poly.
2″
C/C
0.024-0.036
Gallium doped Concentrate (each with measured Gallium content)
n-type Si:P
[110]
2″
280
P/E
19-33
SEMI Prime, 1 Flat @ [1,-1,0], in hard cst
n-type Si:P
[110]
2″
280
P/E
19-33
SEMI Prime,
n-type Si:P
[110] ±0.5°
2″
300
P/E
1-5
SEMI Prime, , TTV<5μm
n-type Si:Sb
[110]
2″
375
P/E
0.005-0.020
SEMI
n-type Si:Sb
[110]
2″
375
P/E
0.005-0.020
SEMI
n-type Si:P
[100]
2″
400
P/P
210-880
SEMI Prime,
n-type Si:P
[100]
50mm
280
P/E
130-280
SEMI Prime,
n-type Si:P
[100]
2″
300
P/P
33-48
SEMI TEST [...]
2019-03-07meta-author
PAM XIAMEN offers Graphene film on Ni/SiO2/Si.
Graphene is an allotrope of carbon, whose structure is one-atom-thick planar sheets of sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice. The term graphene was coined as a combination of graphite and the [...]
2019-05-06meta-author
This standard specifies the test method for the dislocation density of germanium single crystal. This standard method is applicable to the measurement of dislocation density of monocrystal germanium on {111), {100} and {113} planes. The test range is 0cm-2~100000cm-2.
1. Normative Document Citation for Determining [...]
2021-11-02meta-author
InP-based three-terminal electronic devices mainly include InP-based heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). PAM-XIAMEN can provide indium phosphide (InP) HEMT epi wafer, in which InGaAs use as the channel material and InAlAs as the barrier layer. The InP HEMT structure [...]
2022-07-22meta-author
PAM XIAMEN offers (111) Silicon Wafers.
If you don’t see what you need then please email us your specs.
Diam
(mm)
Material
Dopant
Orient.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
6″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
7″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
8″
Intrinsic Si:-
[111] ±0.5°
750
E/E
FZ >10,000
SEMI notch, TEST (defects, [...]
2019-02-22meta-author