PAM XIAMEN offers 2″CZ Prime Silicon Wafer-2
2″ Silicon Wafer
Resistivity 1-5Ωcm
P type, Boron doped
Orientation (100)
Thickness 300±25μm
SSP
SEMI Prime, 1Flat, Hard cst
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-11meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm,
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
TTV<5µm, Bow<30µm, Warp<30µm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and [...]
2019-07-05meta-author
PAM XIAMEN offers 8″CZ Prime Silicon Wafer-2
8″ Silicon Wafer
CZ, <111>,
thickness 1.0 mm,
p-type
resistivity 1-80ohm.cm,
warp < 50 um,
single side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-16meta-author
PAM-01A is a single channel preamplifier. It can be used as a key part for semiconductor detector, including CZT and Si, or others, including scintillator and gas.
1. Charge Sensitive Pre-amplifier Specification
Power Consumption
<0.43W
Power
±12V
Output Resistance
50 Ω
Equivalent Noise
ENC: 130e–
Working temperature
-20℃-+40℃
Falling edge time
250 ~ 400us
Input charge range
<1000fc
Gain
G=10mv/fc
Dimension
100×76×44mm3
Weight
265g
2. Charge [...]
2019-04-25meta-author
PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide
6″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 [...]
2020-04-15meta-author
PAM XIAMEN offers Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate: PAM-191005-SI/SIO2/TI/AU: Au( highly oriented polycrystalline)/Ti/ SiO2 on Silicon substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Ti=2 nm ,SiO2=300nm
Specifications Au/Ti/SiO2/Si substrate:
1.Structure: Au/Ti/ SiO2 on Si substrate
Flim thickness:
Au(111)=50 nm
Ti=2 nm
SiO2=300 nm
2.Substrate spec:
Material:Si substrate
Size: 4″ dia.
Orientation:(100)
Type:P type
Dopant:B doped
Thickness:525 um
Grade: [...]
2019-04-26meta-author