GaN系LED用のエピタキシャルウエハ
PAM-XIAMEN者のGaN（窒化ガリウム）は、LED用のエピタキシャルウエハは、超高輝度青色及び緑色の発光ダイオード（LED）及びレーザーダイオード（LD）アプリケーションのためのものであるベース。
- 説明
製品の説明
The LED epitaxial wafer is a substrate heated to an appropriate temperature. The LED wafer material is the cornerstone of the technology development for the semiconductor lighting industry. Different substrate materials require different LED epitaxial wafer growth technology, chip processing technology and device packaging technology. The substrate for LED epi wafer determines the development route of semiconductor lighting technology. To achieve luminous efficiency, epitaxial wafer suppliers pay more attention to GaN based LED epitaxial wafer, since the epitaxial wafer price is in low cost, and the epi wafer defect density is small. LED epi wafer advantage on GaN substrate is the realization of high efficiency, large area, single lamp and high power, which make the process technology simplify and improve the large yield rate. The development prospects of the LED epi wafer market are optimistic.
1. LED Wafer List
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LED Epitaxial Wafer |
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| アイテム | Size | Orientation | Emission | Wavelength | Thickness | 基板 | Surface | Usable area |
| PAM-50-LED-BLUE-F | 50mm | 0°±0.5° | blue light | 445-475nm | 425um+/-25um | Sapphire | P/L | >90% |
| PAM-50-LED-BLUE-PSS | 50mm | 0°±0.5° | blue light | 445-475nm | 425um+/-25um | Sapphire | P/L | >90% |
| PAM-100-LED-BLUE-F | 100mm | 0°±0.5° | blue light | 445-475nm | / | Sapphire | P/L | >90% |
| PAM-100-LED-BLUE-PSS | 100mm | 0°±0.5° | blue light | 445-475nm | / | Sapphire | P/L | >90% |
| PAM-150-LED-BLUE | 150mm | 0°±0.5° | blue light | 445-475nm | / | Sapphire | P/L | >90% |
| PAM-100-LED-BLUE-SIL | 50mm | 0°±0.5° | blue light | 445-475nm | / | Silicon | P/L | >90% |
| PAM-100-LED-BLUE-SIL | 100mm | 0°±0.5° | blue light | 445-475nm | / | Silicon | P/L | >90% |
| PAM-150-LED-BLUE-SIL | 150mm | 0°±0.5° | blue light | 445-475nm | / | Silicon | P/L | >90% |
| PAM-200-LED-BLUE-SIL | 200mm | 0°±0.5° | blue light | 445-475nm | / | Silicon | P/L | >90% |
| PAM-50-LED-GREEN-F | 50mm | 0°±0.5° | green light | 510-530nm | 425um+/-25um | Sapphire | P/L | >90% |
| PAM-50-LED-GREEN-PSS | 50mm | 0°±0.5° | green light | 510-530nm | 425um+/-25um | Sapphire | P/L | >90% |
| PAM-100-LED-GREEN-F | 100mm | 0°±0.5° | green light | 510-530nm | / | Sapphire | P/L | >90% |
| PAM-100-LED-GREEN-PSS | 100mm | 0°±0.5° | green light | 510-530nm | / | Sapphire | P/L | >90% |
| PAM-150-LED-GREEN | 150mm | 0°±0.5° | green light | 510-530nm | / | Sapphire | P/L | >90% |
| PAM-100-LED-RED-GAAS-620 | 100mm | 15°±0.5° | red light | 610-630nm | / | GaAs | P/L | >90% |
| PAM210527-LED-660 | 100mm | 15°±0.5° | red light | 660nm | / | GaAs | P/L | >90% |
| PAM-210414-850nm-LED | 100mm | 15°±0.5° | IR | 850nm | / | GaAs | P/L | >90% |
| PAMP21138-940LED | 100mm | 15°±0.5° | IR | 940nm | / | GaAs | P/L | >90% |
| PAM-50-LED-UV-365-PSS | 50mm | 0°±0.5° | UVA | 365 nm | 425um+/-25um | Sapphire | ||
| PAM-50-LED-UV-405-PSS | 50mm | 0°±0.5° | UVA | 405 nm | 425um+/-25um | Sapphire | ||
| PAM-50-LED-UVC-275-PSS | 50mm | 0°±0.5° | UVC | 275nm | 425um+/-25um | Sapphire | ||
| PAM-50-LD-UV-405-SIL | 50mm | 0°±0.5° | UV | 405nm | / | Silicon | P/L | >90% |
| PAM-50-LD-BLUE-450-SIL | 50mm | 0°±0.5° | blue light | 450nm | / | Silicon | P/L | >90% |
As a LED epitaxial wafer manufacturer, PAM-XIAMEN can offer activated and unactivated GaN Epi LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers. LED epitaxial wafer on GaN is grown by MOCVD with PSS or flat sapphire for LCD back light, mobile, electronic or UV(ultraviolet), with blue or green or red emission, including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.
2. InGaN/GaN系(gallium nitride) based LED Epitaxial Wafer
Al2O3-2” 上のGaNエピウェハ仕様（LED用のエピタキシャルウエハ）
| White： 445～460 nm |
| Blue： 465～475 nm |
| Green： 510～530 nm |
1.成長技術 - MOCVD
2.Wafer直径：50.8ミリメートル
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3) or Flat Sapphire
4.Waferパターンサイズ：3X2X1.5μm
3. Wafer structure:
| 構造層 | Thickness(μm) |
| p型GaN | 0.2 |
| p型AlGaN | 0.03 |
| InGaN / GaNの（アクティブ領域） | 0.2 |
| n型GaN | 2.5 |
| GaN系U- | 3.5 |
| Al 2 O 3（基板） | 430 |
4. Wafer parameters to make chips:
| em | 色 | チップサイズ | 特性 | 外観 | |
| PAM1023A01 | ブルー | 10ミルのx 23mil |  |
照明 | |
| VF = 2.8〜3.4V | LCDバックライト | ||||
| ポー= 18〜25MW | モバイル機器 | ||||
| WD = 450〜460nmで | 民生電子 | ||||
| PAM454501 | ブルー | 45milのx 45mil | VF = 2.8〜3.4V |  |
一般照明 |
| ポー= 250〜300mWの | LCDバックライト | ||||
| WD = 450〜460nmで | 屋外ディスプレイ |
5. Application of LED epitaixal wafer:
*If you need to know more detail information of Blue LED Epitaxial Wafer, please contact with our sales departments
点灯
LCDバックライト
モバイル機器
民生電子
6. Specification of LED Epi Wafer as an example:
Spec PAM190730-LED
– size : 4 inch
– WD : 455 ± 10nm
– brightness : > 90mcd
– VF : < 3.3V
– n-GaN Thickness : <4.1㎛
– u-GaN thickness : <2.2㎛
– substrate : patterned sapphire substrate (PSS)
7.GaAs(Gallium arsenide)based LED Wafer Material:
GaAsのLEDウェハについて、それらはMOCVDによって成長されたGaAs LEDウェハの波長以下を参照してください。
赤：585nm、615nm、620〜630nmの
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573nm
8. Definition of LED Epitaxial Wafer:
What we offer is bare LED epi wafer or not processed wafer without lithography processes, n- and metals contacts, etc. And you can fabricate the LED chip using your fabrication equipment for different application such as nano optoelectronics research.
Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!
ウェーハの仕様をLEDこれらの詳細のGaAsの場合は、以下を参照してください。LED用のGaAsエピウエハ
UV LEDウエハの仕様については、以下をご覧ください。UV LEDエピウエハ
シリコン仕様のLEDウエハについて、ご覧ください。シリコン上のLEDウェハー
ブルーGaN系LDウエハーの仕様については、以下をご覧ください。 ブルーGaN系LDウエハー
For Violet GaN LD Wafer, please visit: 405nm GaN Laser Diode Wafer
850nm and 940nm infrared LED wafer
850-880nm and 890-910nm Red Infrared AlGaAs /GaAs LED Epi-Wafer
GaN Wafers to Fabricate LED Devices
GaN LED Structure Epitaxy on Flat or PSS Sapphire Substrate
Formation of V-Shaped Pits in Nitride Films Grown by Metalorganic Chemical Vapor Deposition
Si-based GaN PIN Photodetector Structure
For more foundry services, please visit: GaN Foundry Services for LED Fabrication
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