PAM XIAMEN offers 4″ Epitaxial Silicon Wafer. If necessary, we can do SRP (spreading resistance profile) test for you.
Item
Parameter
Spec
Unit
1
Growth Method
CZ
2
Diameter
100+/-0.5
mm
3
Type-Dopant
P- Boron
4
Resistivity
0.002 – 0.003
ohm-cm
5
Resistivity Radial Variation
<10
%
6
Crystal Orientation
<111> 4 +/- 0.5
degree
7
Primary Flat
Orientation
Semi
degree
Length
Semi
mm
8
Secondary Flat
Orientation
Semi
degree
Length
semi
mm
9
Thickness
525 +/- 25
μm
10
TTV
≦10
μm
11
Bow
≦40
μm
12
Warp
≦40
μm
13
Front Surface
polished
14
Backside
etched
—
5000 +/-10% Angstoms SiO2
15
Surface Appearance
no Cratches, haze, edge chips, orange peel, defects,contamination
—
16
Edge [...]
2021-03-16meta-author
PAM XIAMEN offers 4″Silicon Ignot.
Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm),
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats. Lifetime>1,000us,
Ox/Carbon <1E16/cc.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found [...]
2019-07-05meta-author
PAM XIAMEN offers 6″CZ Prime Silicon Wafer-1
Item8, 25pcs
Silicon wafer:
i. Diameter: 150 mm ± 0.5 mm,
ii. Thickness: 675μm ±25μm
iii. Doping: P type
iv. Orientation: (111) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
[...]
2020-03-30meta-author
Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detector
A CdZnTe electro-optic radiation detector was used to calibrate nuclear reactor pulses. The standard configuration of the Pockels cell has collimated light passing through an optically transparent CdZnTe crystal located between crossed polarizers. The transmitted [...]
Highlights
•
A effective annealing method was adopted for CdMnTe:In crystals with different thickness.
•
The crystal quality and the detector performance were improved remarkably after annealing.
•
The detectors can meet the requirement of gamma-ray detection for different energies.
Abstract
Radiation detectors with different thickness are needed to detect gamma rays [...]
2017-12-11meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
(mm)
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
N
Phos
FZ
(111) Off 2″ Towards (110)
2k-5k
350-400
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
10-30
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/E
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/P
PRIME
50.8
N
Phos
CZ
-100
225-275
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
225-275
P/P
PRIME
50.8
N
As
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
N
Sb
CZ
-100
.005-.02
250-300
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/WTOx
50.8
N
Phos
FZ
-100
2000-5000
275-325
P/P
PRIME
50.8
N
Phos
CZ
-100
450-500
P/P
PRIME
50.8
N
Phos
CZ
-100
43485
500-550
P/E
PRIME
50.8
N
Phos
CZ
-100
1000-1050
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
2900-3100
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.
PAM-XIAMEN develops advanced crystal [...]
2019-02-27meta-author