A method for the annealing of a CdZnTe crystal is described in this paper. Pure Cd and Zn metals are used as annealing sources, which simultaneously provide exact Cd and Zn equilibrium partial pressures for CdZnTe at a certain temperature. Characterizations reveal that homogeneity [...]
2020-02-18meta-author
PAM XIAMEN offers 4″ Test Grade Silicon Wafer.
Can you quote the same silicon wafer but 100 wafer instead of 50 Need to be packed in 25 wafer pack with cleanroom paper separators
• 50 silicon wafers (reclaim or test) to serve as polish [...]
2019-06-28meta-author
PAM XIAMEN offers 60+1mm FZ Si Ingot -5
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-16meta-author
PSA-01 is a portable nuclear spectrum acquisition instrument, which integrates main amplifier,multi-channel pulse analyzer and high-voltage. Its gain, high-voltage and shaping time are adjustable. With upper computer software, it can acquit nuclear spectrum, analyzing, processing and storage data. Its built-in Li-battery could charge more [...]
2019-04-25meta-author
Physicists reveal material for high-speed quantum internet
Electrical excitation causes a point defect in the crystal lattice of silicon carbide to emit single photons, which are of use to quantum cryptography. Credit: Elena Khavina, MIPT
Researchers from the Moscow Institute of Physics and Technology have rediscovered [...]
2018-07-25meta-author
Gallium arsenide single crystal growth method of PAM-XIAMEN products is liquid-sealed straight pull method (LEC), vertical Bridgman method (VB), or vertical gradient solidification (VGF), which are current mainstream industrial growth methods. Here is a brief introduction for the GaAs single crystal growth method.
1. LEC for Gallium [...]
2021-06-22meta-author