平面U-GaN自立型GaN基板

平面U-GaN自立型GaN基板

PAM-XIAMENは平面U-GaN自立型GaN基板を提供します

アイテム PAM-FS-GAN AU
寸法 5 x 10 mm2または5x 20 mm2
厚さ 380 +/- 50um
方向付け M軸に向かう平面（11-20）のオフ角度0±0.5°

C軸に向かう平面（11-20）のオフ角度-1±0.2°
伝導型 N型/ドープなし
抵抗率（300K） <0.1Ω・cm
TTV ≤10 µm
弓 BOW≤10 µm
表面粗さ： 前面：Ra <0.2nm、エピレディ。

裏面：ファイングラインドまたはポリッシュ。
転位密度 ≤5x 106CM-2
マクロ欠陥密度 0cm-2
使用可能エリア > 90％（エッジ除外）
パッケージ 窒素雰囲気下で、クラス100のクリーンルームに梱包された単一のウェーハコンテナにそれぞれ

 

詳細については、メールでお問い合わせください。victorchan@powerwaywafer.comとpowerwaymaterial@gmail.com

2020-08-17

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