For non-cubic crystals, they are inherently anisotropic, that is, different directions have different properties. Take the silicon carbide crystal faces for example as below:
The space groups of 4H-SiC and 6H-SiC are P63mc, and the point group is 6mm. Both belong to the hexagonal system [...]
2021-04-07meta-author
High purity SiC (silicon carbide) substrate, which is for microwave device and graphene epitaxial growth, can be provided by PAM-XIAMEN – a SiC substrate supplier. Among all the usages, epitaxial graphene growth on high-purity semi-insulating silicon carbide substrate is expected to produce high-performance graphene integrated circuits, [...]
2020-08-25meta-author
PAM XIAMEN offers CeO2 Epi-thin film on YSZ Alloy.
CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm
CeO2 Film (40 nm one side) on YSZ <110> 10x10x0.5 mm.
CeO2 Film (40 nm one side) on YSZ, <111>10x10x0.5 mm, 1sp
Due to [...]
2019-04-26meta-author
PAM XIAMEN offers 2″CZ Prime Silicon Wafer-2
2″ Silicon Wafer
Resistivity 1-5Ωcm
P type, Boron doped
Orientation (100)
Thickness 300±25μm
SSP
SEMI Prime, 1Flat, Hard cst
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-11meta-author
PAM XIAMEN offers 5″ FZ Silicon wafers
Silicon wafers, per SEMI Prime,
P/P 5″Ø×240±10µm,
FZ p-type Si:B[100]±0.5°,
Ro=(240-280)Ohmcm,
TTV<5µm, Bow<25µm, Warp<25µm,
Both-sides-polished,
SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-19meta-author
Through continuous efforts, PAM-XIAMEN has developed large-scale COP-free CZ silicon (Si) wafers, and effectively controlled the generation of COP in the ingot by improving the thermal field of crystal pulling, thereby achieving performance improvement and power consumption reduction. The 8-inch silicon wafer application process [...]
2022-06-06meta-author
